PH7030L N-沟道场效应晶体管逻辑电平TrenchMOS N-channel TrenchMOS(tm) logic level FET - Configuration: Single N-channel ; ID DC: 68 A; Qgd (typ): 3.2 nC; RDS(on): 7.9@10V 11@4.5V mOhm; VDSmax: 30 V