| 型号 | 厂商 | 批号 | 封装 | 说明 |
|
PH3330L
| NXP | 10+ | SOT669 | 沟道场效应晶体管逻辑电平TrenchMOS |
|
PSMN059-150Y
| NXP | 10+ | SOT669 | 沟道场效应晶体管逻辑电平TrenchMOS |
|
PH20100S
| NXP | 10+ | SOT669 | 沟道场效应晶体管逻辑电平TrenchMOS |
|
PH2525L
| NXP | 10+ | SOT669 | 沟道场效应晶体管逻辑电平TrenchMOS |
|
PH4025L
| NXP | 10+ | SOT669 | 沟道场效应晶体管逻辑电平TrenchMOS |
|
PH5525L
| NXP | 10+ | SOT669 | 沟道场效应晶体管逻辑电平TrenchMOS |
|
PH6325L
| NXP | 10+ | SOT-669 | N沟道场效应晶体管逻辑电平TrenchMOS |
|
PH955L
| NXP | 09+ | SOT669 | 沟道场效应晶体管逻辑电平TrenchMOS |
|
PH9025L
| NXP | 0927+ | SOT-669 | N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 66 A; Qgd (typ): 2.7 nC; RDS(on): 13@4.5 V 9@10 V mOhm; VDSmax: 25.0 V; |
|
PMV65XP
| NXP | 11+ | SOT-23-3 | P沟道TrenchMOS场效应管 P-channel TrenchMOS(tm) extremely low level FET - Configuration: Single P-channel ; ID DC: 3.9 A; Qgd (typ): 0.65 nC; RDS(on): 76@4.5 |
|
2N7002E
| NXP | 11+ | SOT-23 | N沟道增强型场效应晶体管N-channel TrenchMOS FET - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 4400@10V5300@4.5V mOhm; VDSmax: 60 V |
|
2N7002K
| NXP | 11+ | SOT-23 | N沟道增强型场效应晶体管N-channel TrenchMOS FET - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 4400@10V5300@4.5V mOhm; VDSmax: 60 V |
|
BSN20
| NXP | 11+ | SOT-23 | N沟道增强型场效应晶体管 N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 0.173 A; RDS(on): 15000@10V20000@5V mOhm; |
|
PMBF170
| NXP | 11+ | SOT-23 | N沟道增强型场效应晶体管 Standalone 750mA Li-Ion Battery Charger in 2 x 2 DFN; Package: DFN; No of Pins: 6; Temperature Range: -40°C to +125°C |
|
PMN50XP
| NXP | 10+PB | SOT23-6 | P沟道TrenchMOS非常低的水平场效应管 |
|
BC847C
| NXP | 10+ | SOT-23 | 二极管 |
|
SI2304DS
| NXP | 11+ | SOT23-3 | N沟道增强型场效应晶体管N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 1.7 A; Qgd (typ): 1.35 nC; RDS(on): 117@10V1 |
|
PMV117EN
| NXP | 11+ | SOT23-3 | 30 V uTrenchMOS增强场效应晶体管逻辑电平 micro TrenchMOS(tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 2.5 A; Qgd (typ): 1.35 nC; RDS( |
|
BSH108
| NXP | 11+ | SOT23-3 | 30 V N沟道增强型场效应晶体管N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 1.9 A; Qgd (typ): 1.3 nC; RDS(on): 1 |
|
BSH114
| NXP | 11+ | SOT23-3 | N沟道增强型场效应晶体管N-channel enhancement mode field effect transistor - Configuration: Single N-channel ; ID DC: 0.85 A; Qgd (typ): 2.1 nC; RDS(on): 500@10V |