PH2525L N-沟道场效应晶体管逻辑电平TrenchMOS N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 100 A; Qgd (typ): 6.8 nC; RDS(on): 3.9@4.5 V 2.5@10 V mOhm; VDSmax: 25.0 V; Package: SOT669 (LFPAK); Container: Tape reel smd