PMV65XP P沟道TrenchMOS场效应管 P-channel TrenchMOS(tm) extremely low level FET - Configuration: Single P-channel ; ID DC: 3.9 A; Qgd (typ): 0.65 nC; RDS(on): 76@4.5V112@2.5V mOhm; VDSmax: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd