PH20100S N-沟道场效应晶体管逻辑电平TrenchMOS N-channel TrenchMOS(tm) standard level FET - Configuration: Single N-channel ; ID DC: 34.3 A; Qgd (typ): 8.9 nC; RDS(on): 23@10V mOhm; VDSmax: 100 V