PH3330L N-沟道场效应晶体管逻辑电平TrenchMOS N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 100 A; Qgd (typ): 6.9 nC; RDS(on): 4.5@4.5 V 3.3@10 V mOhm; VDSmax: 30.0 V