PH4830L N-沟道场效应晶体管逻辑电平TrenchMOS N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 84 A; Qgd (typ): 5.4 nC; RDS(on): 7@4.5 V 4.8@10 V mOhm; VDSmax: 30 V