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PSMN7R0-30YL
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PSMN7R0-30YL

  • 所属类别:场效应管
  • 产品名称:沟道场效应晶体管逻辑电平Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
  • 厂商:NXP
  • 生产批号:10+
  • 封装:SOT-669
  • 库存状态:有库存
  • 库存量:9000
  • 最低订购量:1
  • 详细资料:点击查找PSMN7R0-30YL的pdf资料
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  • 产品介绍

PSMN7R0-30YL    N-沟道场效应晶体管逻辑电平TrenchMOS      N-channel TrenchMOS logic level FET, SOT669 (LFPAK), Tape reel SMD

PSMN7R0-30YL相关的IC还有:


型号厂商批号封装说明
THS4221 TI10+5SOT-23, 8MSOP, 8MSOP-PowerPAD, 8SOIC低失真高速轨至轨输出运算放大器
THS4215 TI09+8MSOP, 8MSOP-PowerPAD, 8SOIC, 8SON具有关断状态的超快速、超低失真、高速运算放大器
PH8230E NXP10+SOT-669N-沟道场效应晶体管 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3
PH7030L NXP10+SOT-669沟道场效应晶体管逻辑电平Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
THS4211 TI09+8MSOP, 8MSOP-PowerPAD, 8SOIC, 8SON具有关断状态的超快速、超低失真、高速运算放大器
PH6030L NXP10+SOT-669沟道场效应晶体管逻辑电平Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
THS4082 TI08+8MSOP-PowerPAD, 8SOIC双路 175MHz 低功耗电压反馈放大器
PSMN6R0-30YL NXP10+SOT-669沟道场效应晶体管逻辑电平Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
THS4081 TI 8MSOP-PowerPAD, 8SOIC175 MHz 低功耗电压反馈放大器
THS4062 TI09+8MSOP-PowerPAD, 8SOIC双路 180MHz 高输出驱动电压反馈放大器

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