型号 | 厂商 | 批号 | 封装 | 说明 |
THS4221
| TI | 10+ | 5SOT-23, 8MSOP, 8MSOP-PowerPAD, 8SOIC | 低失真高速轨至轨输出运算放大器 |
THS4215
| TI | 09+ | 8MSOP, 8MSOP-PowerPAD, 8SOIC, 8SON | 具有关断状态的超快速、超低失真、高速运算放大器 |
PH8230E
| NXP | 10+ | SOT-669 | N-沟道场效应晶体管 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3 |
PH7030L
| NXP | 10+ | SOT-669 | 沟道场效应晶体管逻辑电平Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V |
THS4211
| TI | 09+ | 8MSOP, 8MSOP-PowerPAD, 8SOIC, 8SON | 具有关断状态的超快速、超低失真、高速运算放大器 |
PH6030L
| NXP | 10+ | SOT-669 | 沟道场效应晶体管逻辑电平Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V |
THS4082
| TI | 08+ | 8MSOP-PowerPAD, 8SOIC | 双路 175MHz 低功耗电压反馈放大器 |
PSMN6R0-30YL
| NXP | 10+ | SOT-669 | 沟道场效应晶体管逻辑电平Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V |
THS4081
| TI | | 8MSOP-PowerPAD, 8SOIC | 175 MHz 低功耗电压反馈放大器 |
THS4062
| TI | 09+ | 8MSOP-PowerPAD, 8SOIC | 双路 180MHz 高输出驱动电压反馈放大器 |