PH4530L N-沟道场效应晶体管逻辑电平TrenchMOS N-channel TrenchMOS(tm) logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6.5 nC; RDS(on): 5.7@10V 7.2@5V mOhm; VDSmax: 30 V