BUK950855B127 场效应晶体管逻辑电平 TrenchMOS (tm) logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 43 nC; RDS(on): 7.5@10V8@5V8.5@4.5V mOhm; Thermal Resistance: 0.59 K/W; VDSmax: 55 V