PH2625L N沟道TrenchMOS⑩标准水平场效应管N-channel TrenchMOS(tm) logic level FET - Configuration: Single N-channel ; ID DC: 100 A; Qgd (typ): 7.3 nC; RDS(on): 4.1@4.5V 2.8@10V mOhm; VDSmax: 25 V