PHB33NQ20T N沟道TrenchMOS⑩标准水平场效应管 N-channel TrenchMOS(tm) standard level FET - Configuration: Single N-channel ; ID DC: 32.7 A; Qgd (typ): 9.6 nC; RDS(on): 77@10V mOhm; VDSmax: 200 V