| 型号 | 厂商 | 批号 | 封装 | 说明 |
|
BYM26E
| NXP | 07+ | SOD-64 | Axialleaded Hermetically Sealed Superfast Recovery Rectifier Diode(反向电压200V,轴向引脚，密封超快恢复整流二极管) |
|
BYM26C
| NXP | 10+ | SOD-64 | 快速软恢复控制雪崩整流器（快速软恢复可控雪崩整流器（600V的）） INNOLINE: RP50-S - Single Outputs up to 15A- Input/Output 1.6kVDC Isolation- Adjustable Output Voltage- No Minimum |
|
BYV28-50
| NXP | 07+ | SOD-64 | 超高速低损失控制雪崩整流器（超快速低损耗控制的雪崩整流器） |
|
PSMN004-55W
| NXP | 10+ | TO-247 | N沟道晶体管TrenchMOS N-channel logic level TrenchMOS (tm) transistor - Configuration: Single N-channel ; ID DC: 100 A; Qgd (typ): 106 nC; RDS(on): 4.2@ |
|
PSMN005-75B
| NXP | 10+ | TO-263-3 | N沟道晶体管TrenchMOS Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:10; Connector Shell Size:12; Connecting Termi |
|
PSMN009-100W
| NXP | 10+ | TO-247 | N沟道晶体管TrenchMOS Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:10; Connector Shell Size:12; Connecting Termi |
|
PSMN035-150P
| NXP | 10+ | TO-220 | N沟道晶体管TrenchMO N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 50 A; Qgd (typ): 33 nC; RDS(on): 35@10V |
|
PSMN057-200B
| NXP | 10+ | TO-263 | N沟道增强型场效应晶体管N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel ; ID DC: 39 A; Qgd (typ): 37 nC; RDS(on): 57@10V mOhm; VDSmax: 200 V |
|
PSMN057-200P
| NXP | 10+ | SOT78/TO-220 | N沟道增强型场效应晶体管N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel ; ID DC: 39 A; Qgd (typ): 37 nC; RDS(on): 57@10V mOhm; VDSmax: 200 V |
|
PSMN063-150D
| NXP | 10+ | SOT-252 | N沟道增强型场效应晶体管Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:4; Connector Shell Siz |
|
PSMN070-200B
| NXP | 10+ | TO-263 | N沟道晶体管TrenchMOS Circular Connector; Body Material:Aluminum; Series:PT07; Number of Contacts:41; Connector Shell Size:20; Connecting Termination:Cri |
|
PSMN070-200P
| NXP | 10+ | TO-220 | N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V |
|
PSMN102-200Y
| NXP | 10+ | SOT-669 | N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V |
|
PSMN130-200D
| NXP | 10+ | SOT-252 | N-channel TrenchMOS transistor(N沟道 TrenchMOS晶体管) |
|
PSMN1R7-30YL
| NXP | 10+ | SOT-669 | N-沟道场效应晶体管 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3 |
|
PH9930L
| NXP | 10+ | SOT-669 | N-沟道场效应晶体管 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3 |
|
PH8230E
| NXP | 10+ | SOT-669 | N-沟道场效应晶体管 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3 |
|
PH7030L
| NXP | 10+ | SOT-669 | 沟道场效应晶体管逻辑电平Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V |
|
PSMN7R0-30YL
| NXP | 10+ | SOT-669 | 沟道场效应晶体管逻辑电平Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V |
|
PH6030L
| NXP | 10+ | SOT-669 | 沟道场效应晶体管逻辑电平Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V |