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PSMN057-200B
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PSMN057-200B

  • 所属类别：场效应管
  • 产品名称：N沟道增强型场效应晶体管N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel ; ID DC: 39 A; Qgd (typ): 37 nC; RDS(on): 57@10V mOhm; VDSmax: 200 V
  • 厂商：NXP
  • 生产批号：10+
  • 封装：TO-263
  • 库存状态：有库存
  • 库存量：9000
  • 最低订购量：1
  • 详细资料：点击查找PSMN057-200B的pdf资料
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  • 产品介绍

PSMN057-200B  N沟道增强型场效应晶体管N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel ; ID DC: 39 A; Qgd (typ): 37 nC; RDS(on): 57@10V mOhm; VDSmax: 200 V

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型号厂商批号封装说明
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PSMN005-75B NXP10+TO-263-3N沟道晶体管TrenchMOS Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:10; Connector Shell Size:12; Connecting Termi
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PSMN063-150D NXP10+SOT-252N沟道增强型场效应晶体管Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:4; Connector Shell Siz
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型号厂商批号封装说明
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PSMN070-200P NXP10+TO-220N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V
PSMN102-200Y NXP10+SOT-669N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V
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PH9930L NXP10+SOT-669N-沟道场效应晶体管 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3
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