PHD22NQ20T N沟道TrenchMOS⑩标准水平场效应管 N-channel Trenchmos (tm) standard level FET - Configuration: Single N-channel ; ID DC: 21.1 A; Qgd (typ): 11.3 nC; RDS(on): 120@10V mOhm; VDSmax: 200 V