主页 > 产品中心 > 场效应管
PMV60EN
产品图片仅供参考
欢迎索取产品详细资料

PMV60EN

  • 所属类别:场效应管
  • 产品名称:增强场效应晶体管逻辑电平
  • 厂商:NXP
  • 生产批号:2011+
  • 封装:SOT23-3
  • 库存状态:有库存
  • 库存量:9000
  • 最低订购量:1
  • 详细资料:点击查找PMV60EN的pdf资料
  • 点击询价
联系我们 在线客服1 在线客服2 点击发送邮件
  • 产品介绍

PMV60EN 增强场效应晶体管逻辑电平  uTrenchMOS (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 4.7 A; Qgd (typ): 1.9 nC; RDS(on): 55@10V72@4.5V mOhm; VDSmax: 30 V

PMV60EN相关的IC还有:


型号厂商批号封装说明
PHB33NQ20T NXP2011+TO-263N沟道TrenchMOS⑩标准水平场效应管
PHD22NQ20T NXP2011+TO-220N沟道TrenchMOS⑩标准水平场效应管
PHP20NQ20T NXP2011+TO-220N沟道TrenchMOS⑩标准水平场效应管
PHP30NQ15T NXP2011+TO-220N沟道TrenchMOS⑩标准水平场效应管
PHW80NQ10T NXP2011+TO-3P增强场效应晶体管逻辑电平
TPS54283 TI2010+TSSOP142A DUAL NON-SYNCHRONOUS CONVERTER
TPS54262-Q1 TI10+20HTSSOP具有低 IQ、电压监控和复位功能的汽车类 2A、60V 降压 DC/DC 转换器
INA217 TI10+16SOIC, 8PDIP用于替换 SSM2017 的低噪声低失真仪表放大器
INA163 TI10+14SOIC低噪音低失真仪表放大器
INA156 TI09+10+8MSOP单电源,轨到轨输出的CMOS仪表放大器

热门搜索


型号厂商批号封装说明
MY33CTC6L-20-M1SC74B1-(20)-L-PMA JAE Electronics25+连接器Standard Circular Connector
D38999/20WJ20SN Amphenol Corporation25+连接器Circular MIL Spec Connector 30P SZ 25 WL MNT SKT
MS27467T25B07SFN Amphenol Aerospace25+连接器Circular MIL Spec Connector LJT 37C 37#16 SKT PLUG
8D7C13W35SN SOURIAU-SUNBANK25+连接器Circular MIL Spec Connector 22P Jam Nut Recpt Sz 13 w/ Skt Cont
216742-0007 MOLEX25+连接器216742-0007 $ 2.735 Cross Referenced to MOLEX - Part MOL216742-0007
EN2997Y11006MN TE Connectivity25+连接器Circular MIL Spec Connector 983-1Y 10-06 PN
EN2997SE01415MN Souriau25+连接器Circular MIL Spec Connector 8533 SS CONN
MBR40100PT_T0_00001 Panjit International Inc.26+DIPSchottky Diodes & Rectifiers 100V,Schottky,TO-3P/TO-247AD,40A
ABCIRHSE06T2214SCWF80M32V0 AB Connectors24+连接器ABCIRH系列连接器组件 全新原装进口 现货
GAP50MDS600000 Amphenol Positronic26+连接器Rectangular MIL Spec Connectors
F4539-000 Littelfuse25+SMDHigh Current Reflowable Thermal Protection
HCRTP-MINI-B Littelfuse25+SMD汽车保险丝 16V 500A MAX F4539-000
F470-A8A LEACH25+继电器LEACH产品-F系列继电器-单刀双断
ABCIRH03HD16S8PCNF80M32P3 AB Connectors25+连接器Circular MIL Spec Connector CIR 5C 5#16S PIN RECP WALL
BR-2032/HEN Panasonic25+DIPLithium Battery Coin 3V 190Mah Primary Through Hole |Panasonic Batteries BR-2032/HEN
MKS2C031001A00KSSD WIMA25+DIP通用膜电容器, 金属化PET, 径向盒式 - 2引脚, 0.1 µF, ± 10%, 40 V, 63 V
MKP2G012201B00MSSD WIMA25+DIPFilm Capacitors MKP 2 2200 pF 400 VDC 3x7.5x7.2 PCM 5
MKS2C044701M00JSSD WIMA25+DIP通用膜电容器, 金属化PET, 径向盒式 - 2引脚, 1 µF, ± 5%, 40 V, 63 V
ZPF000000000167413 TE2023+连接器CMC MALE PLUG 02-04 KEY.N W/O CT + M16
CMC36M02-04SNE TE2023+连接器CMC MALE PLUG 02-04 KEY.N W/O CT

NXP品牌产品推荐


型号厂商批号封装说明
BYT56B NXP2011SOD-64快速软恢复控制雪崩整流器(快速软恢复可控雪崩整流器)
BYT56D NXP2011SOD-64快速软恢复控制雪崩整流器(快速软恢复可控雪崩整流器)
BYT56G NXP2011SOD-64快速软恢复控制雪崩整流器(快速软恢复可控雪崩整流器)
BYT56J NXP2011SOD-64快速软恢复控制雪崩整流器(快速软恢复可控雪崩整流器)
BYT56K NXP2011SOD-64快速软恢复控制雪崩整流器(快速软恢复可控雪崩整流器)
BYT56A NXP2011SOD-64快速软恢复控制雪崩整流器(快速软恢复可控雪崩整流器)
BYM36AGP NXP2011SOD-64快速软恢复控制雪崩整流器(快速软恢复可控雪崩整流器)
BYM36BGP NXP2011SOD-64快速软恢复控制雪崩整流器(快速软恢复可控雪崩整流器)
BYM36CGP NXP2011SOD-64快速软恢复控制雪崩整流器(快速软恢复可控雪崩整流器)
BYM36DGP NXP2011SOD-64快速软恢复控制雪崩整流器(快速软恢复可控雪崩整流器)
BYM36EGP NXP2011SOD-64快速软恢复控制雪崩整流器(快速软恢复可控雪崩整流器)
BYM26D NXP07+SOD-64Axialleaded Hermetically Sealed Superfast Recovery Rectifier Diode(反向电压200V,轴向引脚,密封超快恢复整流二极管)
BYM26E NXP07+SOD-64Axialleaded Hermetically Sealed Superfast Recovery Rectifier Diode(反向电压200V,轴向引脚,密封超快恢复整流二极管)
BYM26C NXP10+SOD-64快速软恢复控制雪崩整流器(快速软恢复可控雪崩整流器(600V的)) INNOLINE: RP50-S - Single Outputs up to 15A- Input/Output 1.6kVDC Isolation- Adjustable Output Voltage- No Minimum
BYV28-50 NXP07+SOD-64超高速低损失控制雪崩整流器(超快速低损耗控制的雪崩整流器)
PSMN004-55W NXP10+TO-247N沟道晶体管TrenchMOS N-channel logic level TrenchMOS (tm) transistor - Configuration: Single N-channel ; ID DC: 100 A; Qgd (typ): 106 nC; RDS(on): 4.2@
PSMN005-75B NXP10+TO-263-3N沟道晶体管TrenchMOS Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:10; Connector Shell Size:12; Connecting Termi
PSMN009-100W NXP10+TO-247N沟道晶体管TrenchMOS Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:10; Connector Shell Size:12; Connecting Termi
PSMN035-150P NXP10+TO-220N沟道晶体管TrenchMO N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 50 A; Qgd (typ): 33 nC; RDS(on): 35@10V
PSMN057-200B NXP10+TO-263N沟道增强型场效应晶体管N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel ; ID DC: 39 A; Qgd (typ): 37 nC; RDS(on): 57@10V mOhm; VDSmax: 200 V

分类检索