| 型号 | 厂商 | 批号 | 封装 | 说明 |
|
TCSS-1302
| Vishay | N／A | DIP | 光电开关 |
|
BYT42J
| VISHAY | 03+ | SOD-57 | 全新原装 |
|
SI2302
| VISHAY | 2011+ | SOT23-3 | NPN硅射频功率晶体管 |
|
SI2301
| VISHAY | 2009+ | SOT-23-3 | P通道的2.5 V（GS）的MOSFET的 |
|
DG212BDY
| VISHAY | 10+ | SOIC-16 | Analog Switch / Multiplexer (Mux) IC; On-Resistance, Rds(on):85ohm; Analog Switch Function:General Purpose; Leakage Current:0.5nA; Supply Voltage Max: |
|
SI2304BDS
| Vishay | 10+ | SOT-23 | N-Channel 30-V (D-S) MOSFET |
|
SI2304BDS-T1-E3
| Vishay | 10+ | SOT-23 | N-Channel 30-V (D-S) MOSFET |
|
Si2328DS-T1-E3
| Vishay | 10+ | SOT-23 | N沟道MOSFET的12V板网的开关电源，降压配置; N-Channel MOSFET for 12-V Boardnet SMPS; buck configuration; |
|
Si2308DS
| Vishay | 10+ | SOT-23 | N沟道MOSFET的12V板网的开关电源，降压配置; N-Channel MOSFET for 12-V Boardnet SMPS; buck configuration; |
|
Si2308DS-T1-E3
| Vishay | 10+ | SOT-23 | N沟道MOSFET的12V板网的开关电源，降压配置; N-Channel MOSFET for 12-V Boardnet SMPS; buck configuration; |
|
Si2308BDS-T1-E3
| Vishay | 10+ | SOT-23 | N沟道MOSFET的12V板网的开关电源，降压配置; N-Channel MOSFET for 12-V Boardnet SMPS; buck configuration; |
|
Si2308BDS
| Vishay | 10+ | SOT-23 | N沟道MOSFET的12V板网的开关电源，降压配置; N-Channel MOSFET for 12-V Boardnet SMPS; buck configuration; |
|
IRF1010
| Vishay | 10+ | TO-263 | Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A |
|
IRF1310S
| Vishay | 10+ | TO-263 | Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) |
|
IRF1310
| Vishay | 10+ | TO-220 | Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) |
|
IRF510STRRPBF
| Vishay | 11+ | TO-263 | N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET |
|
IRF510STRR
| Vishay | 11+ | TO-263 | N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET |
|
IRF510STRLPBF
| Vishay | 11+ | TO-263 | N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET |
|
IRF510STRL
| Vishay | 11+ | TO-263 | N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET |
|
IRF510SPBF
| Vishay | 11+ | TO-263 | N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET |