| 型号 | 厂商 | 批号 | 封装 | 说明 | 
		
			| 
                                    Si2308DS
                                 | Vishay | 10+ | SOT-23 | N沟道MOSFET的12V板网的开关电源,降压配置; N-Channel MOSFET for 12-V Boardnet SMPS; buck configuration; | 
		
			| 
                                    Si2308DS-T1-E3
                                 | Vishay | 10+ | SOT-23 | N沟道MOSFET的12V板网的开关电源,降压配置; N-Channel MOSFET for 12-V Boardnet SMPS; buck configuration; | 
		
			| 
                                    Si2308BDS-T1-E3
                                 | Vishay | 10+ | SOT-23 | N沟道MOSFET的12V板网的开关电源,降压配置; N-Channel MOSFET for 12-V Boardnet SMPS; buck configuration; | 
		
			| 
                                    Si2308BDS
                                 | Vishay | 10+ | SOT-23 | N沟道MOSFET的12V板网的开关电源,降压配置; N-Channel MOSFET for 12-V Boardnet SMPS; buck configuration; | 
		
			| 
                                    IRF1010
                                 | Vishay | 10+ | TO-263 | Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A | 
		
			| 
                                    IRF1310S
                                 | Vishay | 10+ | TO-263 | Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) | 
		
			| 
                                    IRF1310
                                 | Vishay | 10+ | TO-220 | Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) | 
		
			| 
                                    IRF510STRRPBF
                                 | Vishay | 11+ | TO-263 | N沟道增强型立式DMOS功率场效应管  5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET | 
		
			| 
                                    IRF510STRR
                                 | Vishay | 11+ | TO-263 | N沟道增强型立式DMOS功率场效应管  5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET | 
		
			| 
                                    IRF510STRLPBF
                                 | Vishay | 11+ | TO-263 | N沟道增强型立式DMOS功率场效应管  5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET | 
		
			| 
                                    IRF510STRL
                                 | Vishay | 11+ | TO-263 | N沟道增强型立式DMOS功率场效应管  5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET | 
		
			| 
                                    IRF510SPBF
                                 | Vishay | 11+ | TO-263 | N沟道增强型立式DMOS功率场效应管  5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET | 
		
			| 
                                    IRF510S
                                 | Vishay | 11+ | TO-263 | N沟道增强型立式DMOS功率场效应管  5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET | 
		
			| 
                                    IRF510PBF
                                 | Vishay | 11+ | TO-220 | N沟道增强型立式DMOS功率场效应管  5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET | 
		
			| 
                                    IRF510
                                 | Vishay | 11+ | TO-220 | N沟道增强型立式DMOS功率场效应管  5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET | 
		
			| 
                                    IRF511
                                 | Vishay | 11+ | TO-220 | N沟道增强型立式DMOS功率场效应管  RES 4.75K-OHM 1% 0.125W 100PPM THICK-FILM SMD-0805 5K/REEL-7IN-PA | 
		
			| 
                                    IRF512
                                 | Vishay | 11+ | TO-220 | N沟道增强型立式DMOS功率场效应管  N-Channel Power MOSFETs, 5.5 A, 60-100V | 
		
			| 
                                    IRF513
                                 | Vishay | 11+ | TO-220 | N-Channel Power MOSFETs, 5.5 A, 60-100V | 
		
			| 
                                    IRF520STRR
                                 | Vishay | 10+ | TO-263 | 9.2A, 100V, 0.270 Ohm,, N-Channel Power MOSFET(9.2A, 100V, 0.270 Ω,N沟道增强型功率MOS场效应管) | 
		
			| 
                                    IRF520STRL
                                 | Vishay | 10+ | TO-263 | 9.2A, 100V, 0.270 Ohm,, N-Channel Power MOSFET(9.2A, 100V, 0.270 Ω,N沟道增强型功率MOS场效应管) |