主页 > 产品中心 > 场效应管
Si2308BDS
产品图片仅供参考
欢迎索取产品详细资料

Si2308BDS

  • 所属类别：场效应管
  • 产品名称：N沟道MOSFET的12V板网的开关电源，降压配置; N-Channel MOSFET for 12-V Boardnet SMPS; buck configuration;
  • 厂商：Vishay
  • 生产批号：10+
  • 封装：SOT-23
  • 库存状态：有库存
  • 库存量：9000
  • 最低订购量：1
  • 详细资料：点击查找Si2308BDS的pdf资料
  • 点击询价
联系我们 在线客服1 在线客服2 点击发送邮件
  • 产品介绍

Si2308BDS  N沟道MOSFET的12V板网的开关电源，降压配置; N-Channel MOSFET for 12-V Boardnet SMPS; buck configuration;

与Si2308BDS相关的IC还有：


型号厂商批号封装说明
Si2308BDS-T1-E3 Vishay10+SOT-23N沟道MOSFET的12V板网的开关电源，降压配置; N-Channel MOSFET for 12-V Boardnet SMPS; buck configuration;
Si2308BDS Vishay10+SOT-23N沟道MOSFET的12V板网的开关电源，降压配置; N-Channel MOSFET for 12-V Boardnet SMPS; buck configuration;

热门搜索


型号厂商批号封装说明
SJS830200P Amphenol PCD2023+连接器标准环形连接器 8P SZ22 RECP INLINE BLACK METALIZED
SJS830100P Amphenol PCD2023+连接器标准环形连接器 8P SZ22 PLUG INLINE BLACK METALIZED
M2884017AG1S1 Amphenol24+连接器M28840/17AG1s1
CIRG06RGG18-20S-F80-T12 ITT Interconnect Solutions24+连接器CIR 10C 10#16 SKT PLUG
CIRG06RGG18-1S-F80-T12 ITT Interconnect Solutions24+连接器CIR 5C 5#16 SKT PLUG
CIRH03T1610PCNF80M32V0 TE/AMP24+连接器CONN RCPT HSNG MALE 3POS PNL MNT
ABCIRH03T1610PCNF80M32V0 AB Connectors24+连接器CONN RCPT HSNG MALE 3POS PNL MNT
FRCIR06F-18S-8S-F80-T12-T108 ITT Interconnect Solutions24+连接器CONN PLUG MALE 8P SILV SLDR CUP
TAJT105K020RNJ AVX24+SMDCap Tant Solid 1uF 20V T CASE 10% (3.5 X 2.8 X 1.2mm) Inward L SMD 3528-12 9 Ohm 125°C
RJFTV21G11-29 Amphenol24+连接器连接器金属圆形面板安装插座 RJ45
E43M22MSH3720P1 SOURIAU-SUNBANK21+连接器深度防水连接器
E43M18MSH36MCP1 SOURIAU-SUNBANK21+连接器深度防水连接器
E43M17MSH812P1 SOURIAU-SUNBANK21+连接器深度防水连接器
E43M18MSH38P2 SOURIAU-SUNBANK21+连接器深度防水连接器
E43K16MSH720P1 SOURIAU-SUNBANK21+连接器深度防水连接器
1816098-1 TE2023+DIP继电器RELAY GEN PURPOSE DPDT 8A 12V
207444-9 TE2023+连接器CONN HEADER VERT 18POS 5MM
Z52929 ITT24+连接器Standard Circular Connector CIR 3C 3#12 FR PIN RECP
JAE.JIT.OX-16 JAE Electronics2023+连接器16#退针器
RCS20M-12RD28 SOURIAU-SUNBANK2023+连接器Circular MIL Spec Contacts CONTACT

Vishay品牌产品推荐


型号厂商批号封装说明
IRF1010 Vishay10+TO-263Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
IRF1310S Vishay10+TO-263Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
IRF1310 Vishay10+TO-220Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
IRF510STRRPBF Vishay11+TO-263N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
IRF510STRR Vishay11+TO-263N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
IRF510STRLPBF Vishay11+TO-263N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
IRF510STRL Vishay11+TO-263N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
IRF510SPBF Vishay11+TO-263N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
IRF510S Vishay11+TO-263N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
IRF510PBF Vishay11+TO-220N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
IRF510 Vishay11+TO-220N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
IRF511 Vishay11+TO-220N沟道增强型立式DMOS功率场效应管 RES 4.75K-OHM 1% 0.125W 100PPM THICK-FILM SMD-0805 5K/REEL-7IN-PA
IRF512 Vishay11+TO-220N沟道增强型立式DMOS功率场效应管 N-Channel Power MOSFETs, 5.5 A, 60-100V
IRF513 Vishay11+TO-220N-Channel Power MOSFETs, 5.5 A, 60-100V
IRF520STRR Vishay10+TO-2639.2A, 100V, 0.270 Ohm,, N-Channel Power MOSFET(9.2A, 100V, 0.270 Ω,N沟道增强型功率MOS场效应管)
IRF520STRL Vishay10+TO-2639.2A, 100V, 0.270 Ohm,, N-Channel Power MOSFET(9.2A, 100V, 0.270 Ω,N沟道增强型功率MOS场效应管)
IRF520S Vishay10+TO-2639.2A, 100V, 0.270 Ohm,, N-Channel Power MOSFET(9.2A, 100V, 0.270 Ω,N沟道增强型功率MOS场效应管)
IRF520PBF Vishay10+TO-2209.2A, 100V, 0.270 Ohm,, N-Channel Power MOSFET(9.2A, 100V, 0.270 Ω,N沟道增强型功率MOS场效应管)
IRF520 Vishay10+TO-2209.2A, 100V, 0.270 Ohm,, N-Channel Power MOSFET(9.2A, 100V, 0.270 Ω,N沟道增强型功率MOS场效应管)
IRF522 Vishay10+TO-220N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs

分类检索

Copyright chip100.com © 2010-2011 MCCT粤ICP备14056028号