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IRF540
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IRF540

  • 所属类别：场效应管
  • 产品名称：N-Channel 100V-00.50Ω-30A - TO-220/TO-220FI Power MOSFET(N沟道功率MOSFET)
  • 厂商：Vishay
  • 生产批号：09+
  • 封装：TO-220
  • 库存状态：有库存
  • 库存量：9000
  • 最低订购量：1
  • 详细资料：点击查找IRF540的pdf资料
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  • 产品介绍

IRF540  N-Channel 100V-00.50Ω-30A - TO-220/TO-220FI Power MOSFET(N沟道功率MOSFET)

与IRF540相关的IC还有：


型号厂商批号封装说明
IRF540STRLPBF Vishay09+TO-263N-Channel 100V-00.50Ω-30A - TO-220/TO-220FI Power MOSFET(N沟道功率MOSFET)
IRF540STRL Vishay09+TO-263N-Channel 100V-00.50Ω-30A - TO-220/TO-220FI Power MOSFET(N沟道功率MOSFET)
IRF540SPBF Vishay09+TO-263N-Channel 100V-00.50Ω-30A - TO-220/TO-220FI Power MOSFET(N沟道功率MOSFET)
IRF540S Vishay09+TO-263N-Channel 100V-00.50Ω-30A - TO-220/TO-220FI Power MOSFET(N沟道功率MOSFET)
IRF540PBF Vishay09+TO-220N-Channel 100V-00.50Ω-30A - TO-220/TO-220FI Power MOSFET(N沟道功率MOSFET)
UC2845A TI10+14SOIC, 16SOIC, 8PDIP, 8SOIC电流模式 PWM 控制器
IRF541 Vishay09+TO-220N-Channel Power MOSFETs, 27 A, 60-100V
IRF542 Vishay09+TO-220N-Channel Power MOSFETs, 27 A, 60-100V
IRF543 Vishay09+TO-220N-Channel Power MOSFETs, 27 A, 60-100V
UC2845 TI10+14SOIC, 8PDIP, 8SOIC电流模式 PWM 控制器

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型号厂商批号封装说明
IRF541 Vishay09+TO-220N-Channel Power MOSFETs, 27 A, 60-100V
IRF542 Vishay09+TO-220N-Channel Power MOSFETs, 27 A, 60-100V
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IRF610STRRPBF VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610STRR VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610STRLPBF VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610STRL VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610SPBF VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610S VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610PBF VISHAY10+TO-2203.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610 VISHAY10+TO-2203.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
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IRF614S VISHAY10+TO-263N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)
IRF614PBF VISHAY10+TO-220N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)
IRF614 VISHAY10+TO-220N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)
IRF615 VISHAY10+TO-220TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | TO-220AB
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IRF620STRLPBF VISHAY10+TO-2635.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)

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