主页 > 产品中心 > 场效应管
IRF610S
产品图片仅供参考
欢迎索取产品详细资料

IRF610S

  • 所属类别：场效应管
  • 产品名称：3.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
  • 厂商：VISHAY
  • 生产批号：10+
  • 封装：TO-263
  • 库存状态：有库存
  • 库存量：80000
  • 最低订购量：1
  • 详细资料：点击查找IRF610S的pdf资料
  • 点击询价
联系我们 在线客服1 在线客服2 点击发送邮件
  • 产品介绍

IRF610S    3.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)

与IRF610S相关的IC还有：


型号厂商批号封装说明
IRF610STRRPBF VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610STRR VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610STRLPBF VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610STRL VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610SPBF VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610PBF VISHAY10+TO-2203.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610 VISHAY10+TO-2203.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF612 VISHAY10+TO-220N-Channel Power MOSFETs, 3.5A, 150-200V
IRF614SPBF VISHAY10+TO-263N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)
IRF614S VISHAY10+TO-263N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)

热门搜索


型号厂商批号封装说明
ADIS16575-2BMLZ AD25+Module6 DOF Prec IMU, 8g (450 DPS D
N/MS3108B20-4P JAE Electronics2025+连接器Circular Connector, 4 Contact(s), Synthtic Resin, Male, Solder Terminal, Plug
62IN-18F-10-6S Amphenol Corporation2025+连接器Circular Connector Connector Plug Size 10
NLS-N-BK-C70-M40BEPN250 ITT24+连接器NLS-N-BK-C70-M40B EPN250
V93BR Mors Smitt24+连接器V93BR插座-螺钉端子，轨道安装8极
V17-D MORSSMITT24+继电器继电器插座有弹簧端子
VGE1TS181900L SOURIAU-SUNBANK24+连接器Circular MIL Spec Backshells BACKSHELL SZ18
KEYSTONE26 Keystone Electronics24+连接器EYELET 0.187" BRASS TIN PLATED
KPSE06E14-19SA206 ITT24+连接器Conn Circular SKT 19 POS Crimp ST Cable Mount 19 Terminal 1 Port
KPSE06J14-19P ITT24+连接器Circular MIL Spec Connector KPSE 19C 19#20 PIN PLUG
W-1-005-4STUD T&M24+DIPSERIES W - Stud Input - 4 Stud Type
ABBH2214SDAM AB Connectors2024+连接器连接器尾管
C193A/24EV-U1 沙尔特宝25+DIPVoltage 1100v electric current 50A接触器/优势渠道快捷交付
C195A/24EC-U2 沙尔特宝25+DIP接触器/优势渠道快捷交付
D-U204-E Mors Smitt24+DIP瞬时继电器
PW620-18d/2S/R/KS135 FSG24+DIPStellungsferngeber位置传感器电位器
ST1-DC12V-F Panasonic Electronic Components24+DIPPower Relay 12VDC 5DC/8AAC SPST-NO/SPST-NC(31mm 14mm 11.3mm) THT
MER1S1505SC Murata Power Solutions24+DIPDC DC CONVERTER 5V 1W
P783-Q24-S5-S CUI Inc24+DIPDC DC CONVERTER 5V 15W
9001-18321C00A Oupiin24+连接器DIN41612 Half R Female 48 Pin

VISHAY品牌产品推荐


型号厂商批号封装说明
IRF610PBF VISHAY10+TO-2203.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610 VISHAY10+TO-2203.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF612 VISHAY10+TO-220N-Channel Power MOSFETs, 3.5A, 150-200V
IRF614SPBF VISHAY10+TO-263N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)
IRF614S VISHAY10+TO-263N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)
IRF614PBF VISHAY10+TO-220N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)
IRF614 VISHAY10+TO-220N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)
IRF615 VISHAY10+TO-220TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | TO-220AB
IRF620STRRPBF VISHAY10+TO-2635.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620STRR VISHAY10+TO-2635.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620STRLPBF VISHAY10+TO-2635.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620STRL VISHAY10+TO-2635.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620SPBF VISHAY10+TO-2635.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620S VISHAY10+TO-2635.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620PBF VISHAY10+TO-2205.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620 VISHAY10+TO-2205.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF621 VISHAY10+TO-220N-Channel Power MOSFETs, 7A, 150-200V
IRF622 VISHAY10+TO-220N-Channel Power MOSFETs, 7A, 150-200V
IRF624STRR VISHAY10+TO-263N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为1.1Ω，漏电流为4.1A）)
IRF624STRL VISHAY10+TO-263N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为1.1Ω，漏电流为4.1A）)

分类检索

Copyright chip100.com © 2010-2011 MCCT粤ICP备14056028号