主页 > 产品中心 > 场效应管
IRF610STRLPBF
产品图片仅供参考
欢迎索取产品详细资料

IRF610STRLPBF

  • 所属类别：场效应管
  • 产品名称：3.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
  • 厂商：VISHAY
  • 生产批号：10+
  • 封装：TO-263
  • 库存状态：有库存
  • 库存量：80000
  • 最低订购量：1
  • 详细资料：点击查找IRF610STRLPBF的pdf资料
  • 点击询价
联系我们 在线客服1 在线客服2 点击发送邮件
  • 产品介绍

IRF610STRLPBF    3.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)

与IRF610STRLPBF相关的IC还有：


型号厂商批号封装说明
FAN5902 Fairchild10+WLCSP-12800mA Buck Converter for 3G RFPAs, WL-CSP-12, Tape & Reel
UC2844A TI09+14SOIC, 8PDIP, 8SOIC电流模式 PWM 控制器
UC2844 TI09+14SOIC, 8PDIP, 8SOIC电流模式 PWM 控制器
IRF610STRRPBF VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610STRR VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610STRL VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610SPBF VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610S VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610PBF VISHAY10+TO-2203.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610 VISHAY10+TO-2203.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)

热门搜索


型号厂商批号封装说明
SJS830200P Amphenol PCD2023+连接器标准环形连接器 8P SZ22 RECP INLINE BLACK METALIZED
SJS830100P Amphenol PCD2023+连接器标准环形连接器 8P SZ22 PLUG INLINE BLACK METALIZED
M2884017AG1S1 Amphenol24+连接器M28840/17AG1s1
CIRG06RGG18-20S-F80-T12 ITT Interconnect Solutions24+连接器CIR 10C 10#16 SKT PLUG
CIRG06RGG18-1S-F80-T12 ITT Interconnect Solutions24+连接器CIR 5C 5#16 SKT PLUG
CIRH03T1610PCNF80M32V0 TE/AMP24+连接器CONN RCPT HSNG MALE 3POS PNL MNT
ABCIRH03T1610PCNF80M32V0 AB Connectors24+连接器CONN RCPT HSNG MALE 3POS PNL MNT
FRCIR06F-18S-8S-F80-T12-T108 ITT Interconnect Solutions24+连接器CONN PLUG MALE 8P SILV SLDR CUP
TAJT105K020RNJ AVX24+SMDCap Tant Solid 1uF 20V T CASE 10% (3.5 X 2.8 X 1.2mm) Inward L SMD 3528-12 9 Ohm 125°C
RJFTV21G11-29 Amphenol24+连接器连接器金属圆形面板安装插座 RJ45
E43M22MSH3720P1 SOURIAU-SUNBANK21+连接器深度防水连接器
E43M18MSH36MCP1 SOURIAU-SUNBANK21+连接器深度防水连接器
E43M17MSH812P1 SOURIAU-SUNBANK21+连接器深度防水连接器
E43M18MSH38P2 SOURIAU-SUNBANK21+连接器深度防水连接器
E43K16MSH720P1 SOURIAU-SUNBANK21+连接器深度防水连接器
1816098-1 TE2023+DIP继电器RELAY GEN PURPOSE DPDT 8A 12V
207444-9 TE2023+连接器CONN HEADER VERT 18POS 5MM
Z52929 ITT24+连接器Standard Circular Connector CIR 3C 3#12 FR PIN RECP
JAE.JIT.OX-16 JAE Electronics2023+连接器16#退针器
RCS20M-12RD28 SOURIAU-SUNBANK2023+连接器Circular MIL Spec Contacts CONTACT

VISHAY品牌产品推荐


型号厂商批号封装说明
IRF610STRL VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610SPBF VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610S VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610PBF VISHAY10+TO-2203.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610 VISHAY10+TO-2203.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF612 VISHAY10+TO-220N-Channel Power MOSFETs, 3.5A, 150-200V
IRF614SPBF VISHAY10+TO-263N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)
IRF614S VISHAY10+TO-263N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)
IRF614PBF VISHAY10+TO-220N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)
IRF614 VISHAY10+TO-220N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)
IRF615 VISHAY10+TO-220TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | TO-220AB
IRF620STRRPBF VISHAY10+TO-2635.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620STRR VISHAY10+TO-2635.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620STRLPBF VISHAY10+TO-2635.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620STRL VISHAY10+TO-2635.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620SPBF VISHAY10+TO-2635.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620S VISHAY10+TO-2635.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620PBF VISHAY10+TO-2205.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620 VISHAY10+TO-2205.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF621 VISHAY10+TO-220N-Channel Power MOSFETs, 7A, 150-200V

分类检索

Copyright chip100.com © 2010-2011 MCCT粤ICP备14056028号