型号 | 厂商 | 批号 | 封装 | 说明 |
IRF540SPBF
| Vishay | 09+ | TO-263 | N-Channel 100V-00.50Ω-30A - TO-220/TO-220FI Power MOSFET(N沟道功率MOSFET) |
IRF540S
| Vishay | 09+ | TO-263 | N-Channel 100V-00.50Ω-30A - TO-220/TO-220FI Power MOSFET(N沟道功率MOSFET) |
IRF540PBF
| Vishay | 09+ | TO-220 | N-Channel 100V-00.50Ω-30A - TO-220/TO-220FI Power MOSFET(N沟道功率MOSFET) |
IRF540
| Vishay | 09+ | TO-220 | N-Channel 100V-00.50Ω-30A - TO-220/TO-220FI Power MOSFET(N沟道功率MOSFET) |
IRF541
| Vishay | 09+ | TO-220 | N-Channel Power MOSFETs, 27 A, 60-100V |
IRF542
| Vishay | 09+ | TO-220 | N-Channel Power MOSFETs, 27 A, 60-100V |
IRF543
| Vishay | 09+ | TO-220 | N-Channel Power MOSFETs, 27 A, 60-100V |
IRF610STRRPBF
| VISHAY | 10+ | TO-263 | 3.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管) |
IRF610STRR
| VISHAY | 10+ | TO-263 | 3.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管) |
IRF610STRLPBF
| VISHAY | 10+ | TO-263 | 3.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管) |
IRF610STRL
| VISHAY | 10+ | TO-263 | 3.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管) |
IRF610SPBF
| VISHAY | 10+ | TO-263 | 3.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管) |
IRF610S
| VISHAY | 10+ | TO-263 | 3.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管) |
IRF610PBF
| VISHAY | 10+ | TO-220 | 3.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管) |
IRF610
| VISHAY | 10+ | TO-220 | 3.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管) |
IRF612
| VISHAY | 10+ | TO-220 | N-Channel Power MOSFETs, 3.5A, 150-200V |
IRF614SPBF
| VISHAY | 10+ | TO-263 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为2.0Ω,漏电流为2.8A)) |
IRF614S
| VISHAY | 10+ | TO-263 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为2.0Ω,漏电流为2.8A)) |
IRF614PBF
| VISHAY | 10+ | TO-220 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为2.0Ω,漏电流为2.8A)) |
IRF614
| VISHAY | 10+ | TO-220 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为2.0Ω,漏电流为2.8A)) |