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PSMN057-200P PSMN057-200P NXP 10+ N沟道增强型场效应晶体管N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel ; ID DC: 39 A; Qgd (typ): 37 nC; RDS(on): 57@10V mOhm; VDSmax: 200 V 有库存 询价
PSMN063-150D PSMN063-150D NXP 10+ N沟道增强型场效应晶体管Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:4; Connector Shell Siz 有库存 询价
PSMN070-200B PSMN070-200B NXP 10+ N沟道晶体管TrenchMOS Circular Connector; Body Material:Aluminum; Series:PT07; Number of Contacts:41; Connector Shell Size:20; Connecting Termination:Cri 有库存 询价
PSMN070-200P PSMN070-200P NXP 10+ N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V 有库存 询价
PSMN102-200Y PSMN102-200Y NXP 10+ N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V 有库存 询价
PSMN130-200D PSMN130-200D NXP 10+ N-channel TrenchMOS transistor(N沟道 TrenchMOS晶体管) 有库存 询价
PSMN1R7-30YL PSMN1R7-30YL NXP 10+ N-沟道场效应晶体管 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3 有库存 询价
PH9930L PH9930L NXP 10+ N-沟道场效应晶体管 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3 有库存 询价
PH8230E PH8230E NXP 10+ N-沟道场效应晶体管 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3 有库存 询价
PH7030L PH7030L NXP 10+ 沟道场效应晶体管逻辑电平Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V 有库存 询价
PSMN7R0-30YL PSMN7R0-30YL NXP 10+ 沟道场效应晶体管逻辑电平Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V 有库存 询价
PH6030L PH6030L NXP 10+ 沟道场效应晶体管逻辑电平Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V 有库存 询价
PSMN6R0-30YL PSMN6R0-30YL NXP 10+ 沟道场效应晶体管逻辑电平Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V 有库存 询价
PH8030L PH8030L NXP 10+ 沟道场效应晶体管逻辑电平TrenchMOS 有库存 询价
PH4530L PH4530L NXP 10+ 沟道场效应晶体管逻辑电平TrenchMOS 有库存 询价
PH5330E PH5330E NXP 10+ 沟道场效应晶体管逻辑电平TrenchMOS 有库存 询价
PSMN3R0-30YL PSMN3R0-30YL NXP 10+ 沟道场效应晶体管逻辑电平TrenchMOS 有库存 询价
PSMN2R5-30YL PSMN2R5-30YL NXP 10+ 沟道场效应晶体管逻辑电平TrenchMOS 有库存 询价
PSMN2R0-30YL PSMN2R0-30YL NXP 10+ 沟道场效应晶体管逻辑电平TrenchMOS 有库存 询价
PSMN5R0-30YL PSMN5R0-30YL NXP 10+ 沟道场效应晶体管逻辑电平TrenchMOS 有库存 询价

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