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SI3585DV-T1-E3
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SI3585DV-T1-E3

  • 所属类别：分立元件discrete component
  • 产品名称：MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:19A; On-Resistance, Rds(on):0.2ohm; Rds(on)
  • 厂商：VISHAY
  • 生产批号：10+
  • 封装：TSOP-6
  • 库存状态：有库存
  • 库存量：120000
  • 最低订购量：1
  • 详细资料：点击查找SI3585DV-T1-E3的pdf资料
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  • 产品介绍

SI3585DV-T1-E3

MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:19A; On-Resistance, Rds(on):0.2ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:6-TSOP; Drain-Source Breakdown Voltage:20V

与SI3585DV-T1-E3相关的IC还有：


型号厂商批号封装说明
SI3585DV-T1-E3 VISHAY10+TSOP-6MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:19A; On-Resistance, Rds(on):0.2ohm; Rds(on)
SI3585DV Vishay05+SO-8N／A
SI3585DVT1 Vishay05+SO-8N／A

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