| 型号 | 厂商 | 批号 | 封装 | 说明 |
|
IRF7307QTRPBF
| IR | 10+ | SOP-8 | 20V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 package |
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IRF7307QPBF
| IR | 10+ | SOP-8 | 20V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 package |
|
IRF9910PBF
| IR | 10+ | SOP-8 | 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF9910TR with Lead Free Packaging |
|
IRF8910PBF
| IR | 10+ | SOP-8 | HEXFET Power MOSFET |
|
IRF8915PBF
| IR | 10+ | SOP-8 | 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7331TR with Lead Free Packaging on Tape and Reel |
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IRF8915TRPBF
| IR | 10+ | SOP-8 | 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7331TR with Lead Free Packaging on Tape and Reel |
|
IRF7331PBF
| IR | 10+ | SOP-8 | 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7331TR with Lead Free Packaging on Tape and Reel |
|
IRF7311PBF
| IR | 10+ | SOP-8 | HEXFET Power MOSFET |
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IRF7301TRPBF
| IR | 10+ | SOP-8 | HEXFET Power MOSFET |
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IRF7301PBF
| IR | 10+ | SOP-8 | HEXFET Power MOSFET |
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IRF7530TRPBF
| IR | 10+ | MICRO8 | 20V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package; Similar to IRF7530 with Lead-Free Packaging |
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IRF7530PBF
| IR | 10+ | MICRO8 | 20V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package; Similar to IRF7530 with Lead-Free Packaging |
|
IRF7507PBF
| IR | 10+ | MICRO8 | N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) |
|
IRF7601TRPBF
| IR | 10+ | SOT-263 | N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) |
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IRF7601PBF
| IR | 10+ | SOT-263 | N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) |
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IRF7501TRPBF
| IR | 10+ | SOP-8 | 20V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package; Similar to the IRF7501TR with lead-free packaging |
|
IRLMS1902TRPBF
| IR | 10+ | SOT-23 | 20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package; Similar to IRLML2502 with Tape and Reel and Lead Free Packaging |
|
IRLU3717PBF
| IR | 10+ | SOT-263 | HEXFET Power MOSFET |
|
IRFU3711ZPBF
| IR | 10+ | TO-251 | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.2 to 5.5; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: |
|
IRFU3704ZPBF
| IR | 10+ | TO-251 | 20V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU3704Z with Lead Free Packaging |