型号 | 厂商 | 批号 | 封装 | 说明 |
IRLU3717PBF
| IR | 10+ | SOT-263 | HEXFET Power MOSFET |
IRFU3711ZPBF
| IR | 10+ | TO-251 | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.2 to 5.5; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: |
IRFU3704ZPBF
| IR | 10+ | TO-251 | 20V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU3704Z with Lead Free Packaging |
IRLU3715ZPBF
| IR | 10+ | SOT-263 | HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mヘ , ID = 36A ) |
IRFU3711PBF
| IR | 10+ | SOT-263 | HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mヘ , ID = 36A ) |
IRLU3715PBF
| IR | 10+ | SOT-263 | HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mヘ , ID = 36A ) |
IRLU3714ZPBF
| IR | 10+ | TO-251 | HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mヘ , ID = 36A ) |
IRLU3714PBF
| IR | 10+ | TO-251 | HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mヘ , ID = 36A ) |
IRFU3704PBF
| IR | 10+ | TO-251 | HEXFET Power MOSFET |
IRFU3706PBF
| IR | 10+ | TO-251 | 20V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU3706 with Lead Free Packaging |
IRF6100PBF
| IR | 10+ | MICRO-4 | HEXFET Power MOSFET |
IRLR3717TRLPBF
| IR | 10+ | SOT-263 | HEXFET Power MOSFET |
IRLR3717TRPBF
| IR | 10+ | SOT-263 | HEXFET Power MOSFET |
IRLR3717PBF
| IR | 10+ | SOT-263 | HEXFET Power MOSFET |
IRLR3717TRRPBF
| IR | 10+ | SOT-263 | HEXFET Power MOSFET |
IRFR3711ZTRPBF
| IR | 10+ | TO-252 | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.1 to 5.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: |
IRFR3711ZTRLPBF
| IR | 10+ | TO-252 | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.1 to 5.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: |
IRFR3711ZTRRPBF
| IR | 10+ | TO-252 | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.1 to 5.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: |
IRFR3711ZPBF
| IR | 10+ | TO-252 | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.1 to 5.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: |
IRFR3704ZTRRPBF
| IR | 10+ | TO252 | 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR3704Z with Lead Free Packaging |