| 型号 | 厂商 | 批号 | 封装 | 说明 |
|
BSO303P
| INFINEON | 2010+ | SOP-8 | N通道场效应管 P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 21.0 mOhm; RDS (on) (max) (@4.5V): 32.0 mOhm; R |
|
BSO303SP
| INFINEON | 11+ | SOP-8 | N通道30.0 V 场效应管P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 21.0 mOhm; RDS (on) (max) (@4.5V): 31.0 |
|
BSC110N06NS3
| INFINEON | 11+ | TDSON-8 | N通道30.0 V 场效应管P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0 m |
|
BSO301SP
| INFINEON | 11+ | SOP-8 | N通道30.0 V 场效应管P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0 m |
|
BSO080P03S
| INFINEON | 11+ | SOP-8 | N通道30.0 V 场效应管P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD |
|
BSO080P03NS3
| INFINEON | 11+ | SOP-8 | N通道30.0 V 场效应管P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD |
|
BSO080P03NS3E
| INFINEON | 11+ | SOP-8 | N通道30.0 V 场效应管P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD |
|
BSC110N06NS3G
| INFINEON | 11+ | TDSON-8 | N通道60.0 V 50.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 11.0 mOhm; RDS (o |
|
BSC106N025SG
| INFINEON | 11+ | P-DSO-8 | N通道场效应管OptiMOS㈢2 Power-Transistor |
|
BSC100N06LS3G
| INFINEON | 11+ | TDSON-8 | N通道 60.0 V 50.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS ( |
|
BSC152N10NSFG
| INFINEON | 11+ | TDSON-8 | N通道 100.0 V 63.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 15.2 mOhm; RDS |
|
BSC085N025SG
| INFINEON | 11+ | TDSON-8 | N通道 场效应管OptiMOS㈢2 Power-Transistor |
|
BSC076N06NS3G
| INFINEON | 11+ | TDSON-8 | N通道60.0 V 50.0 A 场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 7.6 mOhm; RDS (o |
|
BSC072N025SG
| INFINEON | 11+ | TDSON-8 | N通道 场效应管OptiMOS㈢2 Power-Transistor |
|
BSC067N06LS3G
| INFINEON | 11+ | TDSON-8 | N通道 场效应管OptiMOS㈢2 Power-Transistor |
|
BSC118N10NSG
| INFINEON | 11+ | P-DSO-8 | N通道 场效应管OptiMOS㈢2 Power-Transistor |
|
BSC048N025SG
| INFINEON | 11+ | P-DSO-8 | N通道 场效应管OptiMOS㈢2 Power-Transistor |
|
BSC037N025SG
| INFINEON | 11+ | P-DSO-8 | N通道 场效应管OptiMOS㈢2 Power-Transistor |
|
BSC035N04LSG
| INFINEON | 11+ | SON-8 | N通道 40.0 V; 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 3.5 mOhm; RDS ( |
|
BSC028N06LS3G
| INFINEON | 11+ | SON-8 | N通道 60.0 V; 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.8 mOhm; RDS ( |