| 型号 | 厂商 | 批号 | 封装 | 说明 |
|
HUF75545P3
| FAIRCHILD | 2010+ | TO-220 | 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET(75A, 80V, 0.010Ω N沟道逻辑电平功率MOS场效应管 |
|
HUF75339S3ST
| FAIRCHILD | 2010+ | TO-263 | 功率场效应管 |
|
HUF75339S3S
| FAIRCHILD | 2010+ | TO-263 | 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N沟道UltraFET功率MOS场效应管) |
|
HUF75339P3
| FAIRCHILD | 2010+ | TO-220 | 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N沟道UltraFET功率MOS场效应管) |
|
HUF75339G3
| FAIRCHILD | 2010+ | TO-247 | 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N沟道UltraFET功率MOS场效应管 |
|
HUF75321P3
| FAIRCHILD | 2010+ | TO-220 | 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs(35A, 55V, 0.034 Ω, N沟道UltraFET功率MOS场效应管) |
|
FQT13N06TF
| FAIRCHILD | 2010+ | SOT-223 | 60V N-Channel QFET; Package: SOT-223; No of Pins: 3; Container: Tape & Reel |
|
FQPF7N10
| FAIRCHILD | 2010+ | TO-220 | 100V的N沟道MOSFET |
|
FQPF50N06
| FAIRCHILD | 2010+ | TO-220 | 60V的P通道MOSFET |
|
FQP80N06
| FAIRCHILD | 2010+ | TO-220 | 60V的P通道MOSFET |
|
FQP47P06
| FAIRCHILD | 2010+ | TO-220 | 60V的P通道MOSFET |
|
FQP30N06
| FAIRCHILD | 2010+ | TO-220 | 60V的N沟道MOSFET |
|
FQP16N25C
| FAIRCHILD | 2010+ | TO-220 | 250V的N沟道MOSFET |
|
FQH140N10
| FAIRCHILD | 2010+ | TO-247 | 100V的N沟道MOSFET |
|
FQD17P06TF
| FAIRCHILD | 2010+ | TO-252 | 60V的N沟道MOSFET |
|
FQA90N10V2
| FAIRCHILD | 2010+ | TO-247 | 100V的N沟道MOSFET |
|
FQA85N06
| FAIRCHILD | 2010+ | TO-247 | 60V N-Channel MOSFET(漏源电压为60V的N沟道增强型MOSFET) |
|
FQA170N06
| FAIRCHILD | 2010+ | TO-3P | 60V N-Channel MOSFET(漏源电压为60V的N沟道增强型MOSFET) |
|
FDU8796
| FAIRCHILD | 2010+ | TO-251 | N沟道的场效应，25V，35A，5.7mOhm |
|
FDS9412_NL
| FAIRCHILD | 2010+ | SOP8 | Single N-Channel Enhancement Mode Field Effect Transistor; ; No of Pins: 8; Container: Tape & Reel |