型号 | 厂商 | 批号 | 封装 | 说明 |
FDMS5672
| FAIRCHILD | 09+ | QFN8 | N-Channel UltraFET Trench MOSFET 60V, 22A, 11.5mohm |
FDMS3662
| FAIRCHILD | 09+ | QFN8 | 100V N-Channel Power Trench MOSFET; Package: Power 56 (PQFN); No of Pins: 8; Container: Tape & Reel |
FDMS5352
| FAIRCHILD | 2010+ | QFN8 | 60V N-Channel Power Trench MOSFET; Package: Power 56 (PQFN); No of Pins: 8; Container: Tape & Reel |
FDMS8460
| FAIRCHILD | 2010+ | QFN8 | 40V N-Channel Power Trench MOSFET; Package: Power 56 (PQFN); No of Pins: 8; Container: Tape & Reel |
NDS7002A
| FAIRCHILD | 2010+ | SOT23-3 | N-Channel Enhancement Mode Field Effect Transistor(N沟道增强型场效应管) |
MMBF170
| FAIRCHILD | 2010+ | SOT-23 | N沟道增强模式场效应管(不适用马鞍山沟道增强型场效应管) |
FDMS3672
| FAIRCHILD | 2010+ | QFN-56 | N沟道UltraFET沟道MOSFET 100V的,22A条,23mohm |
FDN360P
| FAIRCHILD | 2010+ | SOT-23 | Single P-Channel PowerTrench MOSFET; Package: SuperSOT; No of Pins: 3; Container: Tape & Reel |
FDN361BN
| FAIRCHILD | 2010+ | SOT23-3 | 30V N-Channel, Logic Level, PowerTrench MOSFET |
FDMS7692
| FAIRCHILD | 2010+ | PQFN8 | 30V P-Channel PowerTrench MOSFET; Package: SOIC; No of Pins: 8; Container: Tape & Reel |
FDS6681Z
| FAIRCHILD | 2010+ | SOP-8 | 30V P-Channel PowerTrench MOSFET; Package: SOIC; No of Pins: 8; Container: Tape & Reel |
NDS9957
| FAIRCHILD | 2010+ | SOP-8 | Dual N-Channel Enhancement Mode Field Effect Transistor(2.6A,60V,0.16Ω)(双N沟道增强型场效应管(漏电流2.6A, 漏源电压60V,导通电阻0.16Ω)) |
HUFA76413DK8T
| FAIRCHILD | 2010+ | SOP-8 | N沟道逻辑电平UltraFET功率MOSFET 60V的4.8A,56mз |
FDS9945
| FAIRCHILD | 2010+ | SOP-8 | 60V N-Channel PowerTrench MOSFET; Package: SO-8; No of Pins: 8; Container: Tape & Reel |
FDMS2572
| FAIRCHILD | 2010+ | QFN-56 | N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз |
SFP9540
| FAIRCHILD | 2010+ | TO-220 | P-Channel Power MOSFET(漏源电压为-100V的P沟道功率MOS场效应管) |
RFP70N06
| FAIRCHILD | 2010+ | TO-220 | 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs; Package: TO-220; No of Pins: 3; Container: Rail |
RFD16N05LSM
| FAIRCHILD | 2010+ | TO-252 | 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 沟道功率MOS场效应管) |
RFD14N05LSM9A
| FAIRCHILD | 2010+ | TO-252 | 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管) |
RFD14N05LSM
| FAIRCHILD | 2010+ | TO-252 | 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管) |