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RFD14N05LSM9A
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RFD14N05LSM9A

  • 所属类别:场效应管
  • 产品名称:14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
  • 厂商:FAIRCHILD
  • 生产批号:2010+
  • 封装:TO-252
  • 库存状态:有库存
  • 库存量:12000
  • 最低订购量:1
  • 详细资料:点击查找RFD14N05LSM9A的pdf资料
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  • 产品介绍

RFD14N05LSM9A   14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)

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SFP9540 FAIRCHILD2010+TO-220P-Channel Power MOSFET(漏源电压为-100V的P沟道功率MOS场效应管)
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RFD16N05LSM FAIRCHILD2010+TO-25216A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 沟道功率MOS场效应管)
RFD14N05LSM FAIRCHILD2010+TO-25214A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
RFD14N05L FAIRCHILD2010+TO-25114A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
NDT451AN FAIRCHILD2010+SOT-223N-Channel Enhancement Mode Field Effect Transistor(7.2A,30V,0.035Ω)(N沟道增强型场效应管(漏电流7.2A, 漏源电压30V,导通电阻0.035Ω))
NDS356AP FAIRCHILD2010+SOT-23-3P-Channel Logic Level Enhancement Mode Field Effect Transistor(-1.1A,-30V,0.3Ω)(P沟道逻辑增强型MOS场效应管(漏电流-1.1A, 漏源电压-30V,导通电阻0.3Ω))
NDS355AN FAIRCHILD2010+SOT-23-3N-Channel Logic Level Enhancement Mode Field Effect Transistor(1.7A,30V,0.125Ω)(N沟道逻辑增强型MOS场效应管(漏电流1.7A, 漏源电压30V,导通电阻0.125Ω))

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