主页 > 产品中心 > 场效应管
RFP70N06
产品图片仅供参考
欢迎索取产品详细资料

RFP70N06

  • 所属类别:场效应管
  • 产品名称:70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs; Package: TO-220; No of Pins: 3; Container: Rail
  • 厂商:FAIRCHILD
  • 生产批号:2010+
  • 封装:TO-220
  • 库存状态:有库存
  • 库存量:12000
  • 最低订购量:1
  • 详细资料:点击查找RFP70N06的pdf资料
  • 点击询价
联系我们 在线客服1 在线客服2 点击发送邮件
  • 产品介绍

RFP70N06   70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs; Package: TO-220; No of Pins: 3; Container: Rail

RFP70N06相关的IC还有:


型号厂商批号封装说明
FDMS2572 FAIRCHILD2010+QFN-56N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз
FDMS8662 VISHAY2010+QFN-830V N-Channel PowerTrench MOSFET; Package: Power 56 (PQFN); No of Pins: 8; Container: Tape & Reel
FDMS8660S VISHAY2010+QFN-8N -通道的PowerTrench式SyncFET(30V的,40A条,2.4mOHM
SI4435DY VISHAY2010+SOP-830V P-Channel PowerTrench MOSFET; ; No of Pins: 8; Container: Tape & Reel
SFP9540 FAIRCHILD2010+TO-220P-Channel Power MOSFET(漏源电压为-100V的P沟道功率MOS场效应管)
RFD16N05LSM FAIRCHILD2010+TO-25216A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 沟道功率MOS场效应管)
RFD14N05LSM9A FAIRCHILD2010+TO-25214A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
RFD14N05LSM FAIRCHILD2010+TO-25214A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
RFD14N05L FAIRCHILD2010+TO-25114A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
NDT451AN FAIRCHILD2010+SOT-223N-Channel Enhancement Mode Field Effect Transistor(7.2A,30V,0.035Ω)(N沟道增强型场效应管(漏电流7.2A, 漏源电压30V,导通电阻0.035Ω))

热门搜索


型号厂商批号封装说明
SJS830200P Amphenol PCD2023+连接器标准环形连接器 8P SZ22 RECP INLINE BLACK METALIZED
SJS830100P Amphenol PCD2023+连接器标准环形连接器 8P SZ22 PLUG INLINE BLACK METALIZED
M2884017AG1S1 Amphenol24+连接器M28840/17AG1s1
CIRG06RGG18-20S-F80-T12 ITT Interconnect Solutions24+连接器CIR 10C 10#16 SKT PLUG
CIRG06RGG18-1S-F80-T12 ITT Interconnect Solutions24+连接器CIR 5C 5#16 SKT PLUG
CIRH03T1610PCNF80M32V0 TE/AMP24+连接器CONN RCPT HSNG MALE 3POS PNL MNT
ABCIRH03T1610PCNF80M32V0 AB Connectors24+连接器CONN RCPT HSNG MALE 3POS PNL MNT
FRCIR06F-18S-8S-F80-T12-T108 ITT Interconnect Solutions24+连接器CONN PLUG MALE 8P SILV SLDR CUP
TAJT105K020RNJ AVX24+SMDCap Tant Solid 1uF 20V T CASE 10% (3.5 X 2.8 X 1.2mm) Inward L SMD 3528-12 9 Ohm 125°C
RJFTV21G11-29 Amphenol24+连接器连接器金属圆形面板安装插座 RJ45
E43M22MSH3720P1 SOURIAU-SUNBANK21+连接器深度防水连接器
E43M18MSH36MCP1 SOURIAU-SUNBANK21+连接器深度防水连接器
E43M17MSH812P1 SOURIAU-SUNBANK21+连接器深度防水连接器
E43M18MSH38P2 SOURIAU-SUNBANK21+连接器深度防水连接器
E43K16MSH720P1 SOURIAU-SUNBANK21+连接器深度防水连接器
1816098-1 TE2023+DIP继电器RELAY GEN PURPOSE DPDT 8A 12V
207444-9 TE2023+连接器CONN HEADER VERT 18POS 5MM
Z52929 ITT24+连接器Standard Circular Connector CIR 3C 3#12 FR PIN RECP
JAE.JIT.OX-16 JAE Electronics2023+连接器16#退针器
RCS20M-12RD28 SOURIAU-SUNBANK2023+连接器Circular MIL Spec Contacts CONTACT

FAIRCHILD品牌产品推荐


型号厂商批号封装说明
RFD16N05LSM FAIRCHILD2010+TO-25216A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 沟道功率MOS场效应管)
RFD14N05LSM9A FAIRCHILD2010+TO-25214A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
RFD14N05LSM FAIRCHILD2010+TO-25214A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
RFD14N05L FAIRCHILD2010+TO-25114A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
NDT451AN FAIRCHILD2010+SOT-223N-Channel Enhancement Mode Field Effect Transistor(7.2A,30V,0.035Ω)(N沟道增强型场效应管(漏电流7.2A, 漏源电压30V,导通电阻0.035Ω))
NDS356AP FAIRCHILD2010+SOT-23-3P-Channel Logic Level Enhancement Mode Field Effect Transistor(-1.1A,-30V,0.3Ω)(P沟道逻辑增强型MOS场效应管(漏电流-1.1A, 漏源电压-30V,导通电阻0.3Ω))
NDS355AN FAIRCHILD2010+SOT-23-3N-Channel Logic Level Enhancement Mode Field Effect Transistor(1.7A,30V,0.125Ω)(N沟道逻辑增强型MOS场效应管(漏电流1.7A, 漏源电压30V,导通电阻0.125Ω))
NDS352AP FAIRCHILD2010+SOT-23-3P-Channel Logic Level Enhancement Mode Field Effect Transistor(-0.9A,-30V,0.5Ω)(P沟道逻辑增强型MOS场效应管(漏电流-0.9A, 漏源电压-30V,导通电阻0.5Ω))
FDN5630_NL FAIRCHILD2010+SOT-2360V N-Channel PowerTrench MOSFET; Package: SuperSOT; No of Pins: 3; Container: Tape & Reel
MTP3055VL FAIRCHILD2010+TO-220N沟道增强模式的逻辑电平场效应晶体管 N-Channel Logic Level Enhancement Mode Field Effect Transistor; Package: TO-220AB; No of Pins: 3; Container: Rail
HUF76407D3ST FAIRCHILD2010+TO-25211A,60V, 0.107 Ohm, N-Channe, Logic Level UltraFET Power MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
HUF75882G3 FAIRCHILD2010+TO-22075A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET(75A, 100V, 0.008Ω N沟道逻辑电平功率MOS场效应管)
HUF75653G3 FAIRCHILD2010+TO-22075A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET(75A, 100V, 0.008Ω N沟道逻辑电平功率MOS场效应管)
HUF75545P3 FAIRCHILD2010+TO-22075A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET(75A, 80V, 0.010Ω N沟道逻辑电平功率MOS场效应管
HUF75339S3ST FAIRCHILD2010+TO-263功率场效应管
HUF75339S3S FAIRCHILD2010+TO-26375A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N沟道UltraFET功率MOS场效应管)
HUF75339P3 FAIRCHILD2010+TO-22075A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N沟道UltraFET功率MOS场效应管)
HUF75339G3 FAIRCHILD2010+TO-24775A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N沟道UltraFET功率MOS场效应管
HUF75321P3 FAIRCHILD2010+TO-22035A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs(35A, 55V, 0.034 Ω, N沟道UltraFET功率MOS场效应管)
FQT13N06TF FAIRCHILD2010+SOT-22360V N-Channel QFET; Package: SOT-223; No of Pins: 3; Container: Tape & Reel

分类检索