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选择缩略图编号制造商批号说明资料库存询价
IRF612 IRF612 VISHAY 10+ N-Channel Power MOSFETs, 3.5A, 150-200V 有库存 询价
IRF614SPBF IRF614SPBF VISHAY 10+ N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为2.0Ω,漏电流为2.8A)) 有库存 询价
IRF614S IRF614S VISHAY 10+ N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为2.0Ω,漏电流为2.8A)) 有库存 询价
IRF614PBF IRF614PBF VISHAY 10+ N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为2.0Ω,漏电流为2.8A)) 有库存 询价
IRF614 IRF614 VISHAY 10+ N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为2.0Ω,漏电流为2.8A)) 有库存 询价
IRF615 IRF615 VISHAY 10+ TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | TO-220AB 有库存 询价
IRF620STRRPBF IRF620STRRPBF VISHAY 10+ 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管) 有库存 询价
IRF620STRR IRF620STRR VISHAY 10+ 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管) 有库存 询价
IRF620STRLPBF IRF620STRLPBF VISHAY 10+ 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管) 有库存 询价
IRF620STRL IRF620STRL VISHAY 10+ 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管) 有库存 询价
IRF620SPBF IRF620SPBF VISHAY 10+ 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管) 有库存 询价
IRF620S IRF620S VISHAY 10+ 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管) 有库存 询价
IRF620PBF IRF620PBF VISHAY 10+ 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管) 有库存 询价
IRF620 IRF620 VISHAY 10+ 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管) 有库存 询价
IRF621 IRF621 VISHAY 10+ N-Channel Power MOSFETs, 7A, 150-200V 有库存 询价
IRF622 IRF622 VISHAY 10+ N-Channel Power MOSFETs, 7A, 150-200V 有库存 询价
IRF624STRR IRF624STRR VISHAY 10+ N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为1.1Ω,漏电流为4.1A)) 有库存 询价
IRF624STRL IRF624STRL VISHAY 10+ N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为1.1Ω,漏电流为4.1A)) 有库存 询价
IRF624SPBF IRF624SPBF VISHAY 10+ N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为1.1Ω,漏电流为4.1A)) 有库存 询价
IRF624S IRF624S VISHAY 10+ N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为1.1Ω,漏电流为4.1A)) 有库存 询价