| 型号 | 厂商 | 批号 | 封装 | 说明 |
|
BZB784-C6V8,115
| PH3 | 10+ | | Voltage regulator double diodes |
|
PMBT2369,215
| PH3 | 10+ | | NPN switching transistors(NPN开关晶体管 |
|
1N4728A,113
| PH3 | 10+ | | One Watt Zeners |
|
PMBT3904VS,115
| PH3 | 10+ | | NPN switching transistor(NPN开关型晶体管 |
|
BZV55-C3V9,115
| PH3 | 10+ | Tape | Voltage regulator diodes |
|
2PC4081S,115
| PH3 | 10+ | | Paper Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Paper; Capacitance:4uF; Capacitance Tolerance:+/- 10%; Lead Pitch:20.64mm; Leade |
|
BAT54L,315
| PH3 | 10+ | | Schottky barrier diode |
|
PUMB3,115
| PH3 | 10+ | | PNP resistor-equipped double transistor; R1 = 4.7 kohm |
|
BC850BW,115
| PH3 | 10+ | | Ic = 100 mA; Package: PG-SOT323-3; Polarity: NPN; VCEO (max): 45.0 V; VCBO (max): 50.0 V; IC(max): 100.0 mA; ICM (max): 200.0 mA; |
|
BZV55-B39,115
| PH3 | 10+ | | Voltage regulator diodes |
|
BZX84-C13,215
| PH3 | 10+ | | Voltage regulator diodes |
|
BCX70H,215
| PH3 | 10+ | | NPN General Purpose Silicon Transistor(NPN通用晶体管) |
|
PMBD914,215
| PH3 | 10+ | SOT23 | High-speed diode( 高速二极管 |
|
BZB784-C7V5,115
| PH3 | 10+ | | Voltage regulator double diodes |
|
BAS17,215
| PH3 | 10+ | SOT23 | Low-voltage Stabilization Diode(低压稳压二极管) |
|
BCV62C,215
| PH3 | 10+ | | Transistors for Current Mirror Applications; Package: PG-SOT143-4; Polarity: PNP; VCEO (max): 30.0 V; Ptot (max): 300.0 mW; hFE (min): 420.0 - 800.0; |
|
BAS416,115
| PH3 | 10+ | MPQ3000 | Low-leakage diode |
|
PMBTA56,215
| PH3 | 10+ | PH3 | PMBTA56,215 |
|
BSS138P,215
| PH3 | 10+ | PH3 | 50V N-Channel Logic Level Enhancement Mode Field Effect Transistor; Package: SOT-23; No of Pins: 3; Container: Tape & Reel |
|
BSP89,115
| PH3 | 10+ | | N-Channel Small Signal MOSFETs (20V…800V); Package: PG-SOT223-4; Package: SOT-223; VDS (max): 240.0 V; RDS (on) (max) (@10V): 6,000.0 mOhm; RDS (on) ( |