| 型号 | 厂商 | 批号 | 封装 | 说明 |
|
SLA24C04D3
| Infineon | 97+ | DIP-8P | 原装现货 |
|
TCA785
| INFINEON | 2011+ | DIP-16 | 相位控制集成电路 |
|
BSP125
| INFINEON | 11+ | SOT-223 | SIPMOS小信号晶体管（N通道增强模式） |
|
IPB070N06LG
| INFINEON | 10+ | TO-263 | MOSFET N-CH 60V 80A TO-263 |
|
IRF6217PBF
| INFINEON | 2010+ | SOP-8 | N通道场效应管 SMPS MOSFET HEXFET㈢Power MOSFET |
|
IRFU6215PBF
| INFINEON | 2010+ | TO-251 | N通道场效应管 HEXFET㈢ Power MOSFET |
|
IRFR6215TRLPBF
| INFINEON | 2010+ | TO-252 | 150V N通道场效应管 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging |
|
IRFR6215PBF
| INFINEON | 2010+ | TO-252 | 150V N通道场效应管 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging |
|
IRFR6215CTRLPBF
| INFINEON | 2010+ | TO-260 | 150V N通道场效应管 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging |
|
IRFR6215CPBF
| INFINEON | 2010+ | TO-260 | 150V N通道场效应管 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging |
|
IRF6215L-103PBF
| INFINEON | 2010+ | TO-261 | 150V N通道场效应管 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging |
|
IRF6215LPBF
| INFINEON | 2010+ | TO-263 | 150V N通道场效应管 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging |
|
IRF6215STRLPBF
| INFINEON | 2010+ | TO-263 | 150V N通道场效应管 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging |
|
IRF6215SPBF
| INFINEON | 2010+ | TO-263 | N通道场效应管 HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29ヘ , ID=-13A ) |
|
BSO303P
| INFINEON | 2010+ | SOP-8 | N通道场效应管 P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 21.0 mOhm; RDS (on) (max) (@4.5V): 32.0 mOhm; R |
|
BSO303SP
| INFINEON | 11+ | SOP-8 | N通道30.0 V 场效应管P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 21.0 mOhm; RDS (on) (max) (@4.5V): 31.0 |
|
BSC110N06NS3
| INFINEON | 11+ | TDSON-8 | N通道30.0 V 场效应管P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0 m |
|
BSO301SP
| INFINEON | 11+ | SOP-8 | N通道30.0 V 场效应管P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0 m |
|
BSO080P03S
| INFINEON | 11+ | SOP-8 | N通道30.0 V 场效应管P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD |
|
BSO080P03NS3
| INFINEON | 11+ | SOP-8 | N通道30.0 V 场效应管P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD |