| 型号 | 厂商 | 批号 | 封装 | 说明 |
|
IRFR6215CTRLPBF
| INFINEON | 2010+ | TO-260 | 150V N通道场效应管 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging |
|
IRFR6215CPBF
| INFINEON | 2010+ | TO-260 | 150V N通道场效应管 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging |
|
IRF6215L-103PBF
| INFINEON | 2010+ | TO-261 | 150V N通道场效应管 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging |
|
IRF6215LPBF
| INFINEON | 2010+ | TO-263 | 150V N通道场效应管 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging |
|
IRF6215STRLPBF
| INFINEON | 2010+ | TO-263 | 150V N通道场效应管 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging |
|
IRF6215SPBF
| INFINEON | 2010+ | TO-263 | N通道场效应管 HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29ヘ , ID=-13A ) |
|
BSO303P
| INFINEON | 2010+ | SOP-8 | N通道场效应管 P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 21.0 mOhm; RDS (on) (max) (@4.5V): 32.0 mOhm; R |
|
BSO303SP
| INFINEON | 11+ | SOP-8 | N通道30.0 V 场效应管P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 21.0 mOhm; RDS (on) (max) (@4.5V): 31.0 |
|
BSC110N06NS3
| INFINEON | 11+ | TDSON-8 | N通道30.0 V 场效应管P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0 m |
|
BSO301SP
| INFINEON | 11+ | SOP-8 | N通道30.0 V 场效应管P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0 m |
|
BSO080P03S
| INFINEON | 11+ | SOP-8 | N通道30.0 V 场效应管P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD |
|
BSO080P03NS3
| INFINEON | 11+ | SOP-8 | N通道30.0 V 场效应管P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD |
|
BSO080P03NS3E
| INFINEON | 11+ | SOP-8 | N通道30.0 V 场效应管P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD |
|
BSC110N06NS3G
| INFINEON | 11+ | TDSON-8 | N通道60.0 V 50.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 11.0 mOhm; RDS (o |
|
BSC106N025SG
| INFINEON | 11+ | P-DSO-8 | N通道场效应管OptiMOS㈢2 Power-Transistor |
|
BSC100N06LS3G
| INFINEON | 11+ | TDSON-8 | N通道 60.0 V 50.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS ( |
|
BSC152N10NSFG
| INFINEON | 11+ | TDSON-8 | N通道 100.0 V 63.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 15.2 mOhm; RDS |
|
BSC085N025SG
| INFINEON | 11+ | TDSON-8 | N通道 场效应管OptiMOS㈢2 Power-Transistor |
|
BSC076N06NS3G
| INFINEON | 11+ | TDSON-8 | N通道60.0 V 50.0 A 场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 7.6 mOhm; RDS (o |
|
BSC072N025SG
| INFINEON | 11+ | TDSON-8 | N通道 场效应管OptiMOS㈢2 Power-Transistor |