| 型号 | 厂商 | 批号 | 封装 | 说明 |
|
BZD27C5V6P-GS08
| VISHAY | 10+ | SOD123 | Zener Diodes with Surge Current Specification |
|
SI9410BDY-T1-E3
| vishay | 10+ | SOP8 | MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.1A; On-Resistance, Rds(on):24mohm; Rds(on) Test V |
|
SI4442DY-T1-E3
| VISHAY | 10+ | SOP-8 | MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:22A; On-Resistance, Rds(on):4.5mohm; Rds(on) Test V |
|
BAR64V-02V
| VISHAY | 03+ | SOD523 | |
|
SI3585DV-T1-E3
| VISHAY | 10+ | TSOP-6 | MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:19A; On-Resistance, Rds(on):0.2ohm; Rds(on) |
|
BZD27C39P-GS08
| VISHAY | 10+ | SOT-123 | Zener Diodes with Surge Current Specification |
|
SI4463BDY-T1-E3
| VISHAY | 10+ | SOP-8 | MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:10A; On-Resistance, Rds(on):0.014ohm; Package/Case:8-SOIC; Leaded Process Compatib |
|
SI4840DY-T1-E3
| VISHAY | 10+ | SOP-8 | MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:14A; On-Resistance, Rds(on):9mohm; Rds(on) Test Vol |
|
SI6433BDQ-T1-E3
| VISHAY | 10+ | TSSOP8 | 20V P-Channel PowerTrench MOSFET |
|
IRFB20N50KPBF
| VISHAY | 10+ | TO-220AB | HEXFET Power MOSFET |
|
SI4947ADY-T1-E3
| VISHAY | 10+ | SOP8 | Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes |
|
SI4410BDY-T1-E3
| VISHAY | 10+ | SOP-8 | N-Channel 30-V (D-S) MOSFET |
|
SI6433BDQ-T1-GE3
| vishay | 10+ | TSSOP-8 | 20V P-Channel PowerTrench MOSFET |
|
GL41Y
| VISHAY | 11+ | DO-213AB | 二极管 |
|
WSC25151R000FEA
| VISHAY | 10+ | 2515 | |
|
SI4948BEY
| VISHAY | 11+ | SOP-8 | 场效应管 |
|
SI7858BDP-T1-GE3
| VISHAY | 11+ | QFN8 | N通道12 V（DS）的MOSFET |
|
SS3P4-E3/84A
| VISHAY | 10+PB | DO-220AA | 二极管 |
|
DG212BDY-T1-E3
| VISHAY | 11+ | SOP | 转换芯片 |
|
PR03000202208JAC00
| VISHAY | 10+ | DIP | 金属膜电阻 2.2 ohm 3W +/-5% |