主页 > 产品中心 > 场效应管
IRFP2410
产品图片仅供参考
欢迎索取产品详细资料

IRFP2410

  • 所属类别：场效应管
  • 产品名称：100V,61A,N-Channel HEXFET Power MOSFET(100V,61A,N沟道 HEXFET功率MOS场效应管)
  • 厂商：IR
  • 生产批号：10+
  • 封装：TO-247
  • 库存状态：有库存
  • 库存量：9000
  • 最低订购量：1
  • 详细资料：点击查找IRFP2410的pdf资料
  • 点击询价
联系我们 在线客服1 在线客服2 点击发送邮件
  • 产品介绍

IRFP2410   100V,61A,N-Channel HEXFET Power MOSFET(100V,61A,N沟道 HEXFET功率MOS场效应管)

与IRFP2410相关的IC还有：


型号厂商批号封装说明
CKRA2410 Crydom Inc23+继电器Solidstate relay,10A 24-280V 90-280V i/p,
FRCIR00RFS2410PF80VO ITT24+连接器onnector Reverse Bayonet Coupling Circular RCP 14S-5 ST Box Mount - Bulk
ABCIRHSE06T2410SCNF80M32V0 AB23+连接器连接器套装 ABCIRH系列连接器组件 全新原装进口 现货
ABCIRH03T2410PCNF80M32V0 AB23+连接器连接器套装 ABCIRH系列连接器组件 全新原装进口 现货
CIRH03T2410PCNF80M32V0 AB23+连接器连接器套装 ABCIRH系列连接器组件 全新原装进口 现货
202410-0002 MOLEX2018+连接器MOLEX连接器 国际现货供应
ABCIRPSE06T2410SV0N AB Connectors Ltd2018+连接器ABCIRH系列连接器组件 全新原装进口 现货
ABCIRP2410PFS AB Connectors Ltd2018+连接器军规连接器全新原装进口
BFC233624103 Vishay BCcomponents16+DIPCap Film 0.01uF 630V PP 10% (12.5 X 4 X 10mm) Radial 10mm 110°C T/R - Bulk (Alt: BFC233624103)
742792410 Wurth Electronics Transformers Audio & Signal15+SMDEMI Filter Beads, Chips & Arrays WE-CBF 1806 SMD Bead 1000MHZ 120Ohm 6KmA
ABL2REM24100 施耐德12+DIP开关电源24V/250W
V400W2410M? LITTELFUSE11+DIP连接器
M243082410 ITT Cannon10+ Conn D-Subminiature PL 37 POS 2.8mm Solder ST Thru-Hole 37Terminal 1Port 106
030-2410-003 ITT Cannon10+ Conn Contact PIN 1 POS Crimp ST 1 Terminal 1 Port T/R
030-2410-001 ITT Cannon10+ Conn Contact PIN 1 POS Crimp ST 1Terminal 1Port T/R 32600
908-24100 Amphenol10+ 908-24100 9 s
LM3S2410-IQC25-A2 TI10+11+ 香港现货,进口原装
THD 12-2410WI TRACO10+11+ 香港现货,进口原装
TSI 10N-2410D TRACO10+11+ 香港现货,进口原装
TSI 10N-2410 TRACO10+11+ 香港现货,进口原装

热门搜索


型号厂商批号封装说明
483KGCAE2A 新塘25+QFP128RISC Microcontroller, 32-Bit, FLASH, CORTEX-M4F CPU, 192MHz, CMOS, PQFP128
FRCIR06R36-5P-F80T39-78-M40F ITT Interconnect Solutions24+连接器Circular MIL Spec Connector
FRCIR02R36-6S-F80T39-78-G1 ITT Interconnect Solutions24+连接器Circular MIL Spec Connector
B80K460 Epcos25+传感器SIOV metal oxide varistors
ABMP17T28M13PV0N TT Electronics plc24+连接器ABMP17T28M13PVON /RAIL AND MILITARY LAND SYSTEMS
HC-SN100V4B15 KOHSHIN25+DIP电流传感器
ABCIRP03T1819SV0N AB Connectors24+连接器CONN RCPT HSG FMALE 10POS PNL MT
SHKE470-110-AD LEACH25+继电器继电器座
SHKED470-110-AD LEACH25+继电器继电器座
ADIS16575-2BMLZ AD25+Module6 DOF Prec IMU, 8g (450 DPS D
N/MS3108B20-4P JAE Electronics2025+连接器Circular Connector, 4 Contact(s), Synthtic Resin, Male, Solder Terminal, Plug
62IN-18F-10-6S Amphenol Corporation2025+连接器Circular Connector Connector Plug Size 10
NLS-N-BK-C70-M40BEPN250 ITT24+连接器NLS-N-BK-C70-M40B EPN250
V93BR Mors Smitt24+连接器V93BR插座-螺钉端子，轨道安装8极
V17-D MORSSMITT24+继电器继电器插座有弹簧端子
VGE1TS181900L SOURIAU-SUNBANK24+连接器Circular MIL Spec Backshells BACKSHELL SZ18
KEYSTONE26 Keystone Electronics24+连接器EYELET 0.187" BRASS TIN PLATED
KPSE06E14-19SA206 ITT24+连接器Conn Circular SKT 19 POS Crimp ST Cable Mount 19 Terminal 1 Port
KPSE06J14-19P ITT24+连接器Circular MIL Spec Connector KPSE 19C 19#20 PIN PLUG
W-1-005-4STUD T&M24+DIPSERIES W - Stud Input - 4 Stud Type

IR品牌产品推荐


型号厂商批号封装说明
IRFP244PBF IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.28Ω，漏电流为16A）)
IRFP244 IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.28Ω，漏电流为16A）)
IRFP250PBF IR09+TO-24733A, 200V, 0.085 Ohm,N-Channel PowerMOSFET(33A, 200V, 0.085 Ohm,N沟道增强型功率MOS场效应管)
IRFP250 IR09+TO-24733A, 200V, 0.085 Ohm,N-Channel PowerMOSFET(33A, 200V, 0.085 Ohm,N沟道增强型功率MOS场效应管)
IRFP251 IR09+TO-247TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 33A I(D) | TO-247
IRFP254PBF IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.14Ω，漏电流为25A）)
IRFP254NPBF IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.14Ω，漏电流为25A）)
IRFP254N IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.14Ω，漏电流为25A）)
IRFP254 IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.14Ω，漏电流为25A）)
IRFP260PBF IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压200V,导通电阻55mΩ的N沟道增强型标准功率MOSFET)
IRFP260 IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压200V,导通电阻55mΩ的N沟道增强型标准功率MOSFET)
IRFP264PBF IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压250V,导通电阻0.075Ω的N沟道增强型标准功率MOSFET)
IRFP264NPBF IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压250V,导通电阻0.075Ω的N沟道增强型标准功率MOSFET)
IRFP264N IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压250V,导通电阻0.075Ω的N沟道增强型标准功率MOSFET)
IRFP9140PBF IR10+TO-24719A, 100V, 0.200 Ohm, P-Channel Power MOSFETs(19A, 100V, 0.200 Ω, P沟道功率MOS场效应管)
IRFP9140 IR10+TO-24719A, 100V, 0.200 Ohm, P-Channel Power MOSFETs(19A, 100V, 0.200 Ω, P沟道功率MOS场效应管)
IRFR010TRR IR10+TO-252MOSFET N-CH 50V 8.2A DPAK
IRFR010TRL IR10+TO-252MOSFET N-CH 50V 8.2A DPAK
IRFR010TR IR10+TO-252MOSFET N-CH 50V 8.2A DPAK
IRFR010 IR10+TO-252MOSFET N-CH 50V 8.2A DPAK

分类检索

Copyright chip100.com © 2010-2011 MCCT粤ICP备14056028号