主页 > 产品中心 > 场效应管
IRFP260PBF
产品图片仅供参考
欢迎索取产品详细资料

IRFP260PBF

  • 所属类别：场效应管
  • 产品名称：N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压200V,导通电阻55mΩ的N沟道增强型标准功率MOSFET)
  • 厂商：IR
  • 生产批号：10+
  • 封装：TO-247
  • 库存状态：有库存
  • 库存量：9000
  • 最低订购量：1
  • 详细资料：点击查找IRFP260PBF的pdf资料
  • 点击询价
联系我们 在线客服1 在线客服2 点击发送邮件
  • 产品介绍

IRFP260PBF   N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压200V,导通电阻55mΩ的N沟道增强型标准功率MOSFET)

与IRFP260PBF相关的IC还有：


型号厂商批号封装说明
IRFP251 IR09+TO-247TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 33A I(D) | TO-247
IRFP254PBF IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.14Ω，漏电流为25A）)
IRFP254NPBF IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.14Ω，漏电流为25A）)
IRFP254N IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.14Ω，漏电流为25A）)
IRFP254 IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.14Ω，漏电流为25A）)
IRFP260 IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压200V,导通电阻55mΩ的N沟道增强型标准功率MOSFET)
IRFP264PBF IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压250V,导通电阻0.075Ω的N沟道增强型标准功率MOSFET)
IRFP264NPBF IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压250V,导通电阻0.075Ω的N沟道增强型标准功率MOSFET)
IRFP264N IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压250V,导通电阻0.075Ω的N沟道增强型标准功率MOSFET)
IRFP9140PBF IR10+TO-24719A, 100V, 0.200 Ohm, P-Channel Power MOSFETs(19A, 100V, 0.200 Ω, P沟道功率MOS场效应管)

热门搜索


型号厂商批号封装说明
W-1-005-4STUD T&M24+DIPSERIES W - Stud Input - 4 Stud Type
ABBH2214SDAM AB Connectors2024+连接器连接器尾管
C193A/24EV-U1 沙尔特宝25+DIPVoltage 1100v electric current 50A接触器/优势渠道快捷交付
C195A/24EC-U2 沙尔特宝25+DIP接触器/优势渠道快捷交付
D-U204-E Mors Smitt24+DIP瞬时继电器
PW620-18d/2S/R/KS135 FSG24+DIPStellungsferngeber位置传感器电位器
ST1-DC12V-F Panasonic Electronic Components24+DIPPower Relay 12VDC 5DC/8AAC SPST-NO/SPST-NC(31mm 14mm 11.3mm) THT
MER1S1505SC Murata Power Solutions24+DIPDC DC CONVERTER 5V 1W
P783-Q24-S5-S CUI Inc24+DIPDC DC CONVERTER 5V 15W
9001-18321C00A Oupiin24+连接器DIN41612 Half R Female 48 Pin
9001-18481C00A Oupiin24+连接器DIN41612 Half R Female 48 Pin
CIR013106T01031819SCNP0406 ITT Interconnect Solutions2023+连接器Standard Circular Connector
CIR013106T01031819SCYP0406 ITT Interconnect Solutions24+连接器Standard Circular Connector
110IMX35D12D12-8G Bel Power Solutions24+继电器DC DC CONVERTER 12V 12V 12V 35W
SF400-1F 法国利奇24+继电器RAILWAY SOCKET BASE - H MOUNTING STYLE
UTS6JC10E6S SOURIAU-SUNBANK23+连接器CONN PLUG FMALE 6P GOLD SLDR CUP
DPX2ME-A106SA106S-34B-0001 ITT22+连接器Circular MIL Spec Connector
DPX2MEA106PA106P-33B-0401 ITT Interconnect Solutions24+连接器Conn Rack and Panel ARINC 404 SKT/SKT (106/106)Signal POS Crimp ST Panel
ACB1/PG-4S-S34 MISCELLANEOUS24+连接器CONNECTOR
ACB1/BK-4S-S34 MISCELLANEOUS24+连接器CONNECTOR

IR品牌产品推荐


型号厂商批号封装说明
IRFP260 IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压200V,导通电阻55mΩ的N沟道增强型标准功率MOSFET)
IRFP264PBF IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压250V,导通电阻0.075Ω的N沟道增强型标准功率MOSFET)
IRFP264NPBF IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压250V,导通电阻0.075Ω的N沟道增强型标准功率MOSFET)
IRFP264N IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压250V,导通电阻0.075Ω的N沟道增强型标准功率MOSFET)
IRFP9140PBF IR10+TO-24719A, 100V, 0.200 Ohm, P-Channel Power MOSFETs(19A, 100V, 0.200 Ω, P沟道功率MOS场效应管)
IRFP9140 IR10+TO-24719A, 100V, 0.200 Ohm, P-Channel Power MOSFETs(19A, 100V, 0.200 Ω, P沟道功率MOS场效应管)
IRFR010TRR IR10+TO-252MOSFET N-CH 50V 8.2A DPAK
IRFR010TRL IR10+TO-252MOSFET N-CH 50V 8.2A DPAK
IRFR010TR IR10+TO-252MOSFET N-CH 50V 8.2A DPAK
IRFR010 IR10+TO-252MOSFET N-CH 50V 8.2A DPAK
IRFR014TRRPBF IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TRR IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TRPBF IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TRLPBF IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TRL IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TR IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014PBF IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014 IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR020TRL IR10+SOT252MOSFET N-CH 50V 15A DPAK
IRFR020TR IR10+SOT252MOSFET N-CH 50V 15A DPAK

分类检索

Copyright chip100.com © 2010-2011 MCCT粤ICP备14056028号