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IRFR014PBF
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IRFR014PBF

  • 所属类别：场效应管
  • 产品名称：N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
  • 厂商：IR
  • 生产批号：10+
  • 封装：TO-252
  • 库存状态：有库存
  • 库存量：9000
  • 最低订购量：1
  • 详细资料：点击查找IRFR014PBF的pdf资料
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  • 产品介绍

IRFR014PBF    N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)

与IRFR014PBF相关的IC还有：


型号厂商批号封装说明
IRFR014TRR IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TRPBF IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TRLPBF IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TRL IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TR IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014 IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR020TRL IR10+SOT252MOSFET N-CH 50V 15A DPAK
IRFR020TR IR10+SOT252MOSFET N-CH 50V 15A DPAK
IRFR020 IR10+SOT252MOSFET N-CH 50V 15A DPAK
IRFR024TRR IR10+SOT252Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A)

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型号厂商批号封装说明
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IRFR020TRL IR10+SOT252MOSFET N-CH 50V 15A DPAK
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IRFR024TRL IR10+SOT252Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A)
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IRFR120TRR IR10+SOT2528.4A, 100V, 0.270 Ohm,N-Channel PowerMOSFET(8.4A, 100V, 0.270 Ω,,N沟道增强型功率MOS场效应管)
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