选择 | 缩略图 | 编号 | 制造商 | 批号 | 说明 | 资料 | 库存 | 询价 |
|
 |
IRFR014TRRPBF |
IR |
10+ |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为60V,导通电阻为0.14Ω,漏电流为8.2A)) |
 |
有库存 |
询价 |
|
 |
IRFR014TRR |
IR |
10+ |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为60V,导通电阻为0.14Ω,漏电流为8.2A)) |
 |
有库存 |
询价 |
|
 |
IRFR014TRLPBF |
IR |
10+ |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为60V,导通电阻为0.14Ω,漏电流为8.2A)) |
 |
有库存 |
询价 |
|
 |
IRFR014TRL |
IR |
10+ |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为60V,导通电阻为0.14Ω,漏电流为8.2A)) |
 |
有库存 |
询价 |
|
 |
IRFR014TR |
IR |
10+ |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为60V,导通电阻为0.14Ω,漏电流为8.2A)) |
 |
有库存 |
询价 |
|
 |
IRFR014PBF |
IR |
10+ |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为60V,导通电阻为0.14Ω,漏电流为8.2A)) |
 |
有库存 |
询价 |
|
 |
IRFR014 |
IR |
10+ |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为60V,导通电阻为0.14Ω,漏电流为8.2A)) |
 |
有库存 |
询价 |
|
 |
IRFR020TRL |
IR |
10+ |
MOSFET N-CH 50V 15A DPAK |
 |
有库存 |
询价 |
|
 |
IRFR020TR |
IR |
10+ |
MOSFET N-CH 50V 15A DPAK |
 |
有库存 |
询价 |
|
 |
IRFR020 |
IR |
10+ |
MOSFET N-CH 50V 15A DPAK |
 |
有库存 |
询价 |
|
 |
IRFR024TRR |
IR |
10+ |
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A) |
 |
有库存 |
询价 |
|
 |
IRFR024TRPBF |
IR |
10+ |
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A) |
 |
有库存 |
询价 |
|
 |
IRFR024TRLPBF |
IR |
10+ |
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A) |
 |
有库存 |
询价 |
|
 |
IRFR024TRL |
IR |
10+ |
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A) |
 |
有库存 |
询价 |
|
 |
IRFR024TR |
IR |
10+ |
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A) |
 |
有库存 |
询价 |
|
 |
IRFR024PBF |
IR |
10+ |
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A) |
 |
有库存 |
询价 |
|
 |
IRFR024 |
IR |
10+ |
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A) |
 |
有库存 |
询价 |
|
 |
IRFR110TRPBF |
IR |
10+ |
4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs |
 |
有库存 |
询价 |
|
 |
IRFR110TRLPBF |
IR |
10+ |
4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs |
 |
有库存 |
询价 |
|
 |
IRFR110TRL |
IR |
10+ |
4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs |
 |
有库存 |
询价 |