| 选择 | 缩略图 | 编号 | 制造商 | 批号 | 说明 | 资料 | 库存 | 询价 |
|---|
|
 |
FDMS7692 |
FAIRCHILD |
2010+ |
30V P-Channel PowerTrench MOSFET; Package: SOIC; No of Pins: 8; Container: Tape & Reel |
 |
有库存 |
询价 |
|
|
FDS6681Z |
FAIRCHILD |
2010+ |
30V P-Channel PowerTrench MOSFET; Package: SOIC; No of Pins: 8; Container: Tape & Reel |
|
有库存 |
询价 |
|
|
NDS9957 |
FAIRCHILD |
2010+ |
Dual N-Channel Enhancement Mode Field Effect Transistor（2.6A，60V，0.16Ω）(双N沟道增强型场效应管（漏电流2.6A, 漏源电压60V，导通电阻0.16Ω）) |
|
有库存 |
询价 |
|
|
HUFA76413DK8T |
FAIRCHILD |
2010+ |
N沟道逻辑电平UltraFET功率MOSFET 60V的4.8A，56mз |
|
有库存 |
询价 |
|
|
FDS9945 |
FAIRCHILD |
2010+ |
60V N-Channel PowerTrench MOSFET; Package: SO-8; No of Pins: 8; Container: Tape & Reel |
|
有库存 |
询价 |
|
|
FDMS2572 |
FAIRCHILD |
2010+ |
N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз |
|
有库存 |
询价 |
|
|
FDMS8662 |
VISHAY |
2010+ |
30V N-Channel PowerTrench MOSFET; Package: Power 56 (PQFN); No of Pins: 8; Container: Tape & Reel |
|
有库存 |
询价 |
|
|
FDMS8660S |
VISHAY |
2010+ |
N -通道的PowerTrench式SyncFET（30V的，40A条，2.4mOHM |
|
有库存 |
询价 |
|
|
SI4435DY |
VISHAY |
2010+ |
30V P-Channel PowerTrench MOSFET; ; No of Pins: 8; Container: Tape & Reel |
|
有库存 |
询价 |
|
|
SFP9540 |
FAIRCHILD |
2010+ |
P-Channel Power MOSFET(漏源电压为-100V的P沟道功率MOS场效应管) |
|
有库存 |
询价 |
|
|
RFP70N06 |
FAIRCHILD |
2010+ |
70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs; Package: TO-220; No of Pins: 3; Container: Rail |
|
有库存 |
询价 |
|
|
RFD16N05LSM |
FAIRCHILD |
2010+ |
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 沟道功率MOS场效应管) |
|
有库存 |
询价 |
|
|
RFD14N05LSM9A |
FAIRCHILD |
2010+ |
14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管) |
|
有库存 |
询价 |
|
|
RFD14N05LSM |
FAIRCHILD |
2010+ |
14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管) |
|
有库存 |
询价 |
|
|
RFD14N05L |
FAIRCHILD |
2010+ |
14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管) |
|
有库存 |
询价 |
|
|
NDT451AN |
FAIRCHILD |
2010+ |
N-Channel Enhancement Mode Field Effect Transistor（7.2A，30V，0.035Ω）(N沟道增强型场效应管（漏电流7.2A, 漏源电压30V，导通电阻0.035Ω）) |
|
有库存 |
询价 |
|
|
NDS356AP |
FAIRCHILD |
2010+ |
P-Channel Logic Level Enhancement Mode Field Effect Transistor（-1.1A，-30V，0.3Ω）(P沟道逻辑增强型MOS场效应管（漏电流-1.1A, 漏源电压-30V，导通电阻0.3Ω）) |
|
有库存 |
询价 |
|
|
NDS355AN |
FAIRCHILD |
2010+ |
N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.7A，30V，0.125Ω）(N沟道逻辑增强型MOS场效应管（漏电流1.7A, 漏源电压30V，导通电阻0.125Ω）) |
|
有库存 |
询价 |
|
|
NDS352AP |
FAIRCHILD |
2010+ |
P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.9A，-30V，0.5Ω）(P沟道逻辑增强型MOS场效应管（漏电流-0.9A, 漏源电压-30V，导通电阻0.5Ω）) |
|
有库存 |
询价 |
|
|
FDN5630_NL |
FAIRCHILD |
2010+ |
60V N-Channel PowerTrench MOSFET; Package: SuperSOT; No of Pins: 3; Container: Tape & Reel |
|
有库存 |
询价 |
