主页 > 产品中心 > 场效应管
SFP9540
产品图片仅供参考
欢迎索取产品详细资料

SFP9540

  • 所属类别：场效应管
  • 产品名称：P-Channel Power MOSFET(漏源电压为-100V的P沟道功率MOS场效应管)
  • 厂商：FAIRCHILD
  • 生产批号：2010+
  • 封装：TO-220
  • 库存状态：有库存
  • 库存量：12000
  • 最低订购量：1
  • 详细资料：点击查找SFP9540的pdf资料
  • 点击询价
联系我们 在线客服1 在线客服2 点击发送邮件
  • 产品介绍

SFP9540   P-Channel Power MOSFET(漏源电压为-100V的P沟道功率MOS场效应管)

与SFP9540相关的IC还有：


型号厂商批号封装说明
PCA9540BDP,118 NXP10+ UARTS AND EXPANSION PRODUCTS
031-9540-007 ITT Cannon10+ 031-9540-007 383
51F9540 IBM93+N／A全新库存
IRF9540NS IR12+TO-263场效应管全新原装
IRF9540L IR05+TO-262全新原装
IRFS9540 Fairchild05+TO-263N／A
IRF9540-IR IR03+TO-220全新原装
IRF9540NL IR05+TO-262全新原装
IRF9540NLPBF IR10+SOT-263HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mヘ , ID = -23A )
IRF9540STRR IR10+TO-263Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
IRF9540STRL IR10+TO-263Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
IRF9540SPBF IR10+TO-263Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
IRF9540S IR10+TO-263Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
IRF9540PBF IR10+TO-220Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
SFP9540 FAIRCHILD2010+TO-220P-Channel Power MOSFET(漏源电压为-100V的P沟道功率MOS场效应管)
IRF9540NSTRLPBF IR10+TO-263-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF9540NS with Lead Free packaging shipped on Tape and Reel Left.
IRF9540NSTRRPBF IR10+TO-220AUTOMOTIVE MOSFET
IRF9540N INTEL07+BGA 
IRF9540 IR10+DIP 
IRF9540NPBF IR09+DIP 

热门搜索


型号厂商批号封装说明
J00041A0917 TELEGÄRTNER24+连接器multipin B20 DIN41622 str
609-1024ES TE24+连接器Headers & Wire Housings - 10P - Header - Long- Latch
ESB18150-S-1 POWERGOOD25+DC模块ESB Series 20W / 1.6” x 1” DC/DC
SSDN-10 T&M25+DIPT&M同轴分流器
ABCIRH03T2214PCWF80M32V0 AB Connectors25+连接器onnector Reverse Bayonet Coupling Circular RCP 14S-5 ST Box Mount - Bulk
GTC6L-20-M1SC-74B1-（20）-L-G-PMA JAE Electronics24+连接器Standard Circular Connector
483KGCAE2A 新塘25+QFP128RISC Microcontroller, 32-Bit, FLASH, CORTEX-M4F CPU, 192MHz, CMOS, PQFP128
FRCIR06R36-5P-F80T39-78-M40F ITT Interconnect Solutions24+连接器Circular MIL Spec Connector
FRCIR02R36-6S-F80T39-78-G1 ITT Interconnect Solutions24+连接器Circular MIL Spec Connector
B80K460 Epcos25+传感器SIOV metal oxide varistors
ABMP17T28M13PV0N TT Electronics plc24+连接器ABMP17T28M13PVON /RAIL AND MILITARY LAND SYSTEMS
HC-SN100V4B15 KOHSHIN25+DIP电流传感器
ABCIRP03T1819SV0N AB Connectors24+连接器CONN RCPT HSG FMALE 10POS PNL MT
SHKE470-110-AD LEACH25+继电器继电器座
SHKED470-110-AD LEACH25+继电器继电器座
ADIS16575-2BMLZ AD25+Module6 DOF Prec IMU, 8g (450 DPS D
N/MS3108B20-4P JAE Electronics2025+连接器Circular Connector, 4 Contact(s), Synthtic Resin, Male, Solder Terminal, Plug
62IN-18F-10-6S Amphenol Corporation2025+连接器Circular Connector Connector Plug Size 10
NLS-N-BK-C70-M40BEPN250 ITT24+连接器NLS-N-BK-C70-M40B EPN250
V93BR Mors Smitt24+连接器V93BR插座-螺钉端子，轨道安装8极

FAIRCHILD品牌产品推荐


型号厂商批号封装说明
RFP70N06 FAIRCHILD2010+TO-22070A, 60V, 0.014 Ohm, N-Channel Power MOSFETs; Package: TO-220; No of Pins: 3; Container: Rail
RFD16N05LSM FAIRCHILD2010+TO-25216A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 沟道功率MOS场效应管)
RFD14N05LSM9A FAIRCHILD2010+TO-25214A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
RFD14N05LSM FAIRCHILD2010+TO-25214A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
RFD14N05L FAIRCHILD2010+TO-25114A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
NDT451AN FAIRCHILD2010+SOT-223N-Channel Enhancement Mode Field Effect Transistor（7.2A，30V，0.035Ω）(N沟道增强型场效应管（漏电流7.2A, 漏源电压30V，导通电阻0.035Ω）)
NDS356AP FAIRCHILD2010+SOT-23-3P-Channel Logic Level Enhancement Mode Field Effect Transistor（-1.1A，-30V，0.3Ω）(P沟道逻辑增强型MOS场效应管（漏电流-1.1A, 漏源电压-30V，导通电阻0.3Ω）)
NDS355AN FAIRCHILD2010+SOT-23-3N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.7A，30V，0.125Ω）(N沟道逻辑增强型MOS场效应管（漏电流1.7A, 漏源电压30V，导通电阻0.125Ω）)
NDS352AP FAIRCHILD2010+SOT-23-3P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.9A，-30V，0.5Ω）(P沟道逻辑增强型MOS场效应管（漏电流-0.9A, 漏源电压-30V，导通电阻0.5Ω）)
FDN5630_NL FAIRCHILD2010+SOT-2360V N-Channel PowerTrench MOSFET; Package: SuperSOT; No of Pins: 3; Container: Tape & Reel
MTP3055VL FAIRCHILD2010+TO-220N沟道增强模式的逻辑电平场效应晶体管 N-Channel Logic Level Enhancement Mode Field Effect Transistor; Package: TO-220AB; No of Pins: 3; Container: Rail
HUF76407D3ST FAIRCHILD2010+TO-25211A,60V, 0.107 Ohm, N-Channe, Logic Level UltraFET Power MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
HUF75882G3 FAIRCHILD2010+TO-22075A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET(75A, 100V, 0.008Ω N沟道逻辑电平功率MOS场效应管)
HUF75653G3 FAIRCHILD2010+TO-22075A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET(75A, 100V, 0.008Ω N沟道逻辑电平功率MOS场效应管)
HUF75545P3 FAIRCHILD2010+TO-22075A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET(75A, 80V, 0.010Ω N沟道逻辑电平功率MOS场效应管
HUF75339S3ST FAIRCHILD2010+TO-263功率场效应管
HUF75339S3S FAIRCHILD2010+TO-26375A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N沟道UltraFET功率MOS场效应管)
HUF75339P3 FAIRCHILD2010+TO-22075A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N沟道UltraFET功率MOS场效应管)
HUF75339G3 FAIRCHILD2010+TO-24775A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N沟道UltraFET功率MOS场效应管
HUF75321P3 FAIRCHILD2010+TO-22035A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs(35A, 55V, 0.034 Ω, N沟道UltraFET功率MOS场效应管)

分类检索

Copyright chip100.com © 2010-2011 MCCT粤ICP备14056028号