| 型号 | 厂商 | 批号 | 封装 | 说明 |
|
uPA2714GR
| NEC | 11+ | SOP-8 | 开关的P -沟道功率MOSFET SWITCHING P-CHANNEL POWER MOSFET |
|
uPA2713GR
| NEC | 11+ | SOP-8 | 开关的P -沟道功率MOSFET SWITCHING P-CHANNEL POWER MOSFET |
|
uPA2719AGR
| NEC | 2011+ | SOIC-8 | 开关的P -沟道功率MOSFET |
|
uPA2718GR
| NEC | 11+ | SOP-8 | 场效应管 |
|
uPA2716AGR
| NEC | 2011+ | SOP-8 | 开关的P -沟道功率MOSFET |
|
uPA2717GR
| NEC | 2011+ | SOP-8 | 开关的P -沟道功率MOSFET |
|
2SB548
| NEC | 2010+ | TO-126 | 进步党/ NPN硅外延晶体管低频功放 PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
|
2SA1220A
| NEC | 2010+ | TO-126 | 进步党/ NPN硅外延晶体管 PNP/NPN SILICON EPITAXIAL TRANSISTOR |
|
2SD669
| NEC | 2010+ | TO-126 | NPN Epitaxial Planar Silicon Transistor for 100V/120V, 1A Low-Frequency Power Amplifier Applications(用于100V/120V，1A低频功率放大器应用的NPN硅外延平面型晶体管) |
|
2SD414
| NEC | 2010+ | TO-126 | NPN Epitaxial Planar Silicon Transistor for 100V/120V, 1A Low-Frequency Power Amplifier Applications(用于100V/120V，1A低频功率放大器应用的NPN硅外延平面型晶体管) |
|
2SC2690A
| NEC | 2010+ | TO-126 | 进步党/ NPN硅外延晶体管 PNP/NPN SILICON EPITAXIAL TRANSISTOR |
|
2SD998
| NEC | 2010+ | TO-126 | Plastic Darlington Complementary Silicon Power Transistors(互补型达林顿硅功率晶体管) |
|
2SD986
| NEC | 2010+ | TO-126 | Plastic Darlington Complementary Silicon Power Transistors(互补型达林顿硅功率晶体管) |
|
2SA1009A
| NEC | 2010+ | TO-220 | 进步党硅功率晶体管 PNP SILICON POWER TRANSISTORS |
|
2SD401A
| NEC | 2010+ | TO-220 | 功率晶体管（2A条，150伏，25瓦）POWER TRANSISTORS(2A,150V,25W) |
|
SE313
| NEC | 10+ | 发射管 | 发射管 |
|
SE1003-C
| NEC | 10+ | 发射管 | 发射管 |
|
PH310
| NEC | 10+ | 接收管 | 接收管 |
|
PH302
| NEC | 10+ | 接收管 | 接收管 |
|
PH101
| NEC | 10+ | 光敏接收管 | 光敏接收管 |