PMV117EN 30 V uTrenchMOS增强场效应晶体管逻辑电平 micro TrenchMOS(tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 2.5 A; Qgd (typ): 1.35 nC; RDS(on): 117@10V 190@4.5V mOhm; VDSmax: 30 V