| 型号 | 厂商 | 批号 | 封装 | 说明 |
|
NDT452AP
| FAIRCHILD | 10+ | SOT223 | P-Channel Enhancement Mode Field Effect Transistor（-5A，-30V，0.065Ω）(P沟道增强型场效应管（漏电流-5A, 漏源电压-30V，导通电阻0.065Ω）) |
|
BZX84-C15
| FAIRCHILD | 10+ | SOT-23 | 电压调节器二极管 |
|
FDP39N20
| FAIRCHILD | 11+ | TO-220 | 200伏N沟道MOSFET |
|
FDP060AN08A0
| FAIRCHILD | 11+ | TO-220 | Discrete Automotive N-Channel PowerTrench MOSFET, 75V, 80A, 0.006 Ohms @ VGS = 10V, TO-220AB Package; Package: TO-220; No of Pins: 3; Container: Rai |
|
FDP047AN08A0
| FAIRCHILD | 11+ | TO-220 | 75V N-Channel PowerTrench MOSFET; Package: TO-220; No of Pins: 3; Container: Rai |
|
FDP038AN06A0
| FAIRCHILD | 11+ | TO-220 | Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 0.0038 Ohms @ VGS = 10V, TO-220 Package; Package: TO-220; No of Pins: 3; Container: Rail |
|
FDP031N08
| FAIRCHILD | 11+ | SOT23-3 | N沟道增强模式的逻辑电平场效应晶体管 |
|
FDN5630
| FAIRCHILD | 11+ | SOT23-3 | N沟道增强模式的逻辑电平场效应晶体管 |
|
FDN359BN
| FAIRCHILD | 11+ | SOT23-3 | N沟道增强模式的逻辑电平场效应晶体管 |
|
FDN357N
| FAIRCHILD | 11+ | SOT23-3 | N沟道增强模式的逻辑电平场效应晶体管 |
|
FDMS8670S
| FAIRCHILD | 11+ | QFN8 | N沟道的PowerTrench㈢式SyncFET⑩ |
|
FDMS8670AS
| FAIRCHILD | 11+ | QFN-8 | N沟道的PowerTrench㈢式SyncFET⑩ |
|
FDMC8878
| FAIRCHILD | 11+ | DFN8 | N沟道功率沟道MOSFET 30V的，16.5A，14mohm |
|
FDMC8296
| FAIRCHILD | 11+ | PQFN-8 | 30V N-Channel Power Trench MOSFET; Package: Power 33 (PQFN); No of Pins: 8; Container: Tape & Reel |
|
FDM6296
| FAIRCHILD | 11+ | MLP-8 | 单个N -沟道逻辑电平的PowerTrench MOSFET的30V的㈢，11.5A，10.5ヘ |
|
FDI038AN06A0
| FAIRCHILD | 11+ | TO-262 | N沟道的PowerTrench MOSFET的60V的80A，3.8mз |
|
FDH3632
| FAIRCHILD | 11+ | TO-247 | N沟道的PowerTrench MOSFET |
|
FDH047AN08A0
| FAIRCHILD | 11+ | TO-247 | N沟道的PowerTrench MOSFET的75V的，80A，4.7mз |
|
FDH038AN08A1
| FAIRCHILD | 11+ | TO-247 | N沟道的PowerTrench MOSFET的 |
|
FDD8896_NL
| FAIRCHILD | 11+ | TO-252 | N沟道的PowerTrench MOSFET的 |