型号 | 厂商 | 批号 | 封装 | 说明 |
IRFR2405TRLPBF
| IR | 10+ | D-pak | 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR2405TRL with Lead Free Packaging on Tape and Reel Left |
IRF7328TRPBF
| IR | 10+ | SOP-8 | -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7328TR with Lead Free Packaging on Tape and Reel |
IRLL024ZTRPBF
| IR | 10+ | SOT-223 | 汽车MOSFET |
GBPC25-06W
| IR | 10+ | DIP | Glass Passivated Single-Phase Bridge Rectifier(钝化玻璃单相桥整流器) |
IRFP2907PBF
| IR | 10+ | TO-247 | 汽车MOS (VDSS = 75V , RDS(on) = 4.5mヘ , ID = 209A) |
IRG4PC50SPBF
| IR | 10+ | TO-247 | 绝缘栅双极晶体管 INSULATED GATE BIPOLAR TRANSISTOR |
IRF540NSTRLPBF
| IR | 10+ | TO-263 | 100V N沟道场效应管 |
IRLZ34NSTRLPBF
| IR | 10+ | SOT-263 | 55V N沟道场效应管 |
IRLR120NTRPBF
| IR | 10+ | TO-252 | 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRLR120NTR with Lead Free Packaging on Tape and Reel |
IRFB3004PBF
| IR | 10+ | TO-247 | 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
IRG4PC50UPBF
| IR | 10+ | SMD | 绝缘栅双极晶体管IGBT的速度超快速INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT |
IRF6620TRPBF
| IR | 10+ | SMD | A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes optimized with low on resistance for applications such as ac |
IRG4RC10SPBF
| IR | 10+ | TO-252 | 600V DC-1 kHz (Standard) Discrete IGBT in a D-Pak package; Similar to IRG4RC10S with Lead Free Packaging |
IRFP4232PBF
| IR | 10+ | TO-247 | HEXFET Power MOSFET |
IRF3808PBF
| IR | 10+ | TO-220AB | HEXFET Power MOSFET |
IRF7103TRPBF
| IR | 10+ | SOP-8 | 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7103TR with Lead Free Packaging on Tape and Reel |
IRF6623TR1PBF
| IR | 10+ | QFN | A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 55 amperes optimized with low on resistance for applications such as act |
IR2110STRPBF
| IR | 10+ | SOP-16 | High and Low Side Driver, All High Voltage Pins On One Side, Separate Logic and Power Ground, Shut-Down in a 14-pin DIP package; A IR2110 packaged in |
IRLL2705PBF
| IR | 10+ | SOT-223 | HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) = 0.04ヘ , ID = 3.8A ) |
IRF5800TRPBF
| IR | 10+ | SOT23-6 | -30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package; Similar to IRF5800TR with Lead-Free Packaging. |