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IDB30E60
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IDB30E60

  • 所属类别：整流二极管
  • 产品名称：600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 30.0 A; IF (max): 52.3 A; IF,SM (max): 117.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
  • 厂商：INFINEON
  • 生产批号：2010+
  • 封装：TO-263
  • 库存状态：有库存
  • 库存量：12000
  • 最低订购量：1
  • 详细资料：点击查找IDB30E60的pdf资料
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  • 产品介绍

IDB30E60   600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 30.0 A; IF (max): 52.3 A; IF,SM (max): 117.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;

与IDB30E60相关的IC还有：


型号厂商批号封装说明
1N5819 MIC09+DO-411N5819
IDD09E60 INFINEON2010+PG-TO252-3快恢复二极管600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 9.0 A; IF (max): 19.3 A; IF,SM (max): 40.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDD06E60 INFINEON2010+PG-TO252-3600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 6.0 A; IF (max): 14.7 A; IF,SM (max): 29.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA
IDD03E60 INFINEON2010+PG-TO252-3600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 3.0 A; IF (max): 7.3 A; IF,SM (max): 16.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB45E60 INFINEON2010+TO-263600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 45.0 A; IF (max): 71.0 A; IF,SM (max): 162.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB30E120 INFINEON2010+TO-2631200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 30.0 A; IF (max): 50.0 A; IF,SM (max): 102.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
IDB23E60 Infineon2010+SOT263600V Silicon Power Diodes; Package: P-TO263-3; IF (typ): 23.0 A; IF (max): 41.0 A; IF,SM (max): 89.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB18E120 Infineon2010+SOT2631200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 18.0 A; IF (max): 31.0 A; IF,SM (max): 78.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
IDB15E60 Infineon2010+P-TO220-3-4600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 15.0 A; IF (max): 29.2 A; IF,SM (max): 60.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB12E120 Infineon2010+P-TO220-3-41200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 12.0 A; IF (max): 28.0 A; IF,SM (max): 63.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;

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IDB30E120 INFINEON2010+TO-2631200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 30.0 A; IF (max): 50.0 A; IF,SM (max): 102.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
IDB23E60 Infineon2010+SOT263600V Silicon Power Diodes; Package: P-TO263-3; IF (typ): 23.0 A; IF (max): 41.0 A; IF,SM (max): 89.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB18E120 Infineon2010+SOT2631200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 18.0 A; IF (max): 31.0 A; IF,SM (max): 78.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
IDB15E60 Infineon2010+P-TO220-3-4600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 15.0 A; IF (max): 29.2 A; IF,SM (max): 60.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB12E120 Infineon2010+P-TO220-3-41200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 12.0 A; IF (max): 28.0 A; IF,SM (max): 63.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
IDB09E60 Infineon2010+TO-263600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 9.0 A; IF (max): 19.3 A; IF,SM (max): 40.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB09E120 Infineon2010+TO-2631200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 9.0 A; IF (max): 23.0 A; IF,SM (max): 50.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
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