| 型号 | 厂商 | 批号 | 封装 | 说明 |
|
IDB23E60
| Infineon | 2010+ | SOT263 | 600V Silicon Power Diodes; Package: P-TO263-3; IF (typ): 23.0 A; IF (max): 41.0 A; IF,SM (max): 89.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
|
IDB18E120
| Infineon | 2010+ | SOT263 | 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 18.0 A; IF (max): 31.0 A; IF,SM (max): 78.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA; |
|
IDB15E60
| Infineon | 2010+ | P-TO220-3-4 | 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 15.0 A; IF (max): 29.2 A; IF,SM (max): 60.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
|
IDB12E120
| Infineon | 2010+ | P-TO220-3-4 | 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 12.0 A; IF (max): 28.0 A; IF,SM (max): 63.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA; |
|
IDB09E60
| Infineon | 2010+ | TO-263 | 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 9.0 A; IF (max): 19.3 A; IF,SM (max): 40.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
|
IDB06E60
| Infineon | 2010+ | TO-263 | 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 6.0 A; IF (max): 14.7 A; IF,SM (max): 29.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
|
IDB04E120
| Infineon | 2010+ | TO-263 | 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 4.0 A; IF (max): 11.2 A; IF,SM (max): 28.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA; |
|
ID82C52
| INTERSIL | 2010+ | CDIP-28 | CMOS串行控制器接口 CMOS Serial Controller Interface |
|
ICL7667MJA/883B
| INTERSIL | 2010+ | DIP-8 | 双电源MOSFET驱动器 Dual Power MOSFET Driver |
|
HVB387BWKTR
| 日立 | 2010+ | SOT-23 | 变容二极管的压控振荡器 Variable Capacitance Diode for VCO |