| 型号 | 厂商 | 批号 | 封装 | 说明 |
|
CL03A105MQ3CSNH
| SAMSUNG | 10+ | | HIGH CV CERAMIC CHIP CAPS |
|
CL21B104KACNNNC
| SAMSUNG | 10+ | SMD | CAP, 0.1UF 50V CERM CHIP, 0805 Z5U |
|
CL31A476MQHNNNE
| SAMSUNG | 10+ | SMD | SILICON TRANSISTORS |
|
CL10C220JB8NNNC
| SAMSUNG | 10+ | NA | CAP SMT 22PF 50V 5% NPO 0603 |
|
CL10B105KO8NNNC
| Samsung | 10+ | SMD | 1NF 50V X7R CAPACITY, CERAMIC CMS0603 |
|
CL32A106KATLNNE
| SAMSUNG | 10+ | | ： INDUCTORS FOR POWER LINE SMD |
|
CL31A226MQHNNNE
| SAMSUNG | 10+ | SMD | SILICON TRANSISTORS |
|
CL05B103KO5NNNC
| SAMSUNG | 10+ | SMD | CAP. CER .01MFD 16V 10% X7R |
|
CL05B104KO5NNNC
| SAMSUNG | 10+ | SMD | CAP,SMT,0402,100N,10%,16V,X7R |
|
CL31B475KAHNNNE
| SAMSUNG | 10+ | | CAPACITOR, 0.47UF/25V 1206 20% |
|
CL32B226MQJNNNE
| SAMSUNG | 10+ | SMD | Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:160VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operatin |
|
CL21A475KPFNNNE
| SAMSUNG | 10+ | SMD | CAP 22PF 50V 5% NP0(C0G) SMD-0805 TR-7 PLATED-NI/SN |
|
CL31B106KOHNNNE
| SAMSUNG | 10+ | SMD | CAP CER 1000PF 10% 50V X7R 1206 |
|
CL31C391JBCNNNC
| SAMSUNG | 10+ | SMD | SILICON TRANSISTORS |
|
CL10A106MQ8NNNC
| SAMSUNG | 10+ | SMD | Extremely Low Forward Voltage drop Diode |
|
CL31B104KBCNNNC
| SAMSUNG | 10+ | SMD | CAP,CER ML,0.1UF,X7R,1206 |
|
CL32B106KAULNNE
| SAMSUNG | 10+ | SMD | Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:160VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operatin |
|
CL32A476MQJNNNE
| SAMSUNG | 10+ | | INDUCTORS FOR POWER LINE SMD |
|
CL32A226MOJNNNE
| SAMSUNG | 10+ | SMD | INDUCTORS FOR POWER LINE SMD |
|
CL10A226MQ8NRNE
| SAMSUNG | 10+ | SMD | Extremely Low Forward Voltage drop Diode |